High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi; H. Ishikawa; T. Egawa; K. Asai; M. Mouri; T. Shibata; M. Tanaka; O. Oda

doi:10.1063/1.1790073

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1790073 ◽

2004 ◽

Vol 85 (10) ◽

pp. 1710-1712 ◽

Cited By ~ 76

Author(s):

M. Miyoshi ◽

H. Ishikawa ◽

T. Egawa ◽

K. Asai ◽

M. Mouri ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Cited By ~ 1

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Spacer Layer

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Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fk03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FK03 ◽

Cited By ~ 2

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Shuichi Tomabechi ◽

Norikazu Nakamura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1418452 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3527-3529 ◽

Cited By ~ 197

Author(s):

P. B. Klein ◽

S. C. Binari ◽

K. Ikossi ◽

A. E. Wickenden ◽

D. D. Koleske ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf02 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF02 ◽

Cited By ~ 6

Author(s):

Masanobu Hiroki ◽

Noriyuki Watanabe ◽

Narihiko Maeda ◽

Haruki Yokoyama ◽

Kazuhide Kumakura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l1718 ◽

1991 ◽

Vol 30 (Part 2, No. 10A) ◽

pp. L1718-L1721 ◽

Cited By ~ 7

Author(s):

Toshihide Kikkawa ◽

Tatsuya Ohori ◽

Eizou Mitani ◽

Masahisa Suzuki ◽

Hitoshi Tanaka ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Cited By ~ 15

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Al Content ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.105295 ◽

1991 ◽

Vol 59 (12) ◽

pp. 1485-1487 ◽

Cited By ~ 15

Author(s):

L. Aina ◽

M. Mattingly ◽

M. Burgess ◽

R. Potter ◽

J. M. O’Connor

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Mobility ◽

High Electron Mobility Transistor ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2010.5516265 ◽

2010 ◽

Cited By ~ 1

Author(s):

Hiroki Sugiyama ◽

Hideaki Matsuzaki ◽

Haruki Yokoyama ◽

Takatomo Enoki

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Channel Modulation ◽

Composite Channel ◽

Organic Vapor ◽

Metal Organic

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