Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

2004 ◽  
Vol 96 (8) ◽  
pp. 4293-4296 ◽  
Author(s):  
K. A. Nasyrov ◽  
V. A. Gritsenko ◽  
Yu. N. Novikov ◽  
E.-H. Lee ◽  
S. Y. Yoon ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Trap Ionization

scholarly journals Charge transport mechanism in the forming-free memristor based on silicon nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrei A. Gismatulin ◽  
Gennadiy N. Kamaev ◽  
Vladimir N. Kruchinin ◽  
Vladimir A. Gritsenko ◽  
Oleg M. Orlov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
High Resistance ◽  
High Speed ◽  
Current Model ◽  
Chemical Vapor Deposition Method ◽  
Initial State ◽  
Resistance State ◽  
Trap Ionization ◽  
Assisted Tunneling

AbstractNonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

2009 ◽  
Vol 53 (3) ◽  
pp. 251-255 ◽  
Author(s):  
A.V. Vishnyakov ◽  
Yu.N. Novikov ◽  
V.A. Gritsenko ◽  
K.A. Nasyrov
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Trap Ionization

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

2010 ◽  
Vol 50 (2) ◽  
pp. 207-210 ◽  
Author(s):  
Yu.N. Novikov ◽  
A.V. Vishnyakov ◽  
V.A. Gritsenko ◽  
K.A. Nasyrov ◽  
H. Wong
Keyword(s):  
Charge Transport ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Ionization Effect ◽  
Trap Ionization ◽  
Amorphous Al2o3

Charge transport in MNOS structures with metal grains at the silica–silicon nitride interface

1980 ◽  
Vol 58 (1) ◽  
pp. 87-97 ◽  
Author(s):  
S. A. Biryukov ◽  
V. M. Efimov ◽  
V. A. Kolosanov ◽  
A. A. Frantsuzov ◽  
A. L. Aseev
Keyword(s):  
Silicon Nitride ◽  
Charge Transport
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