Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films

2002 ◽  
Vol 80 (2) ◽  
pp. 261-263 ◽  
Author(s):  
S. Habermehl ◽  
C. Carmignani
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Charge Transport

Charge Transport in Low Stress Si-rich Silicon Nitride Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
S. Habermehl ◽  
C. Carmignani
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Charge Transport ◽  
Barrier Height ◽  
Composition Range ◽  
Molecular Level ◽  
Leakage Currents ◽  
Bond Strain ◽  
Frenkel Emission ◽  
Bulk Charge

AbstractField dependent bulk charge transport in Si-rich, low stress silicon nitride thin films is studied in correlation to the local atomic Si-N bond strain. Across a range of film compositions varying from fully stoichiometric Si3N4 to Si-rich SiN0.54, Poole-Frenkel emission is determined to be the dominant charge transport mechanism with the Poole- Frenkel barrier height found to decrease concomitantly from 1.10 to 0.52 eV. Across the same composition range the local residual Si-N bond strain, as measured by FTIR spectroscopy, is observed to vary from 0.006 to –0.0026. Comparison of the barrier height to the residual strain reveals a direct correlation between the two quantities. It is concluded that reductions in the Poole-Frenkel barrier height are a manifestation of compositionally induced strain relief at the molecular level. Reductions in the barrier height result in increased Poole-Frenkel emission detrapping rates and consequently higher leakage currents in Si-rich films.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

2010 ◽  
Vol 518 (14) ◽  
pp. 3891-3893 ◽  
Author(s):  
J.C. Alonso ◽  
F.A. Pulgarín ◽  
B.M. Monroy ◽  
A. Benami ◽  
M. Bizarro ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Nanoclusters

Correlation between microstructure and charge transport in poly(2,5-dimethoxy-p-phenylenevinylene) thin films

2007 ◽  
Vol 76 (19) ◽  
Author(s):  
M. Sims ◽  
S. M. Tuladhar ◽  
J. Nelson ◽  
R. C. Maher ◽  
M. Campoy-Quiles ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

The influence of electrode material on charge transport properties of polypyrrole thin films

2001 ◽  
Vol 388 (1-2) ◽  
pp. 171-176 ◽  
Author(s):  
R. Valaski ◽  
S. Ayoub ◽  
L. Micaroni ◽  
I.A. Hümmelgen
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Electrode Material

scholarly journals Polymer Charge Transport: Charge-Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regioregular Poly(3-hexylthiophene) (Adv. Mater. 16/2009)

2009 ◽  
Vol 21 (16) ◽  
pp. NA-NA
Author(s):  
Leslie H. Jimison ◽  
Michael F. Toney ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
Alberto Salleo
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Regioregular Poly
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