InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots

2004 ◽  
Vol 85 (6) ◽  
pp. 1024-1026 ◽  
Author(s):  
Jun Tatebayashi ◽  
Yasuhiko Arakawa ◽  
Nobuaki Hatori ◽  
Hiroji Ebe ◽  
Mitsuru Sugawara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dots ◽  
Postgrowth Annealing ◽  
Metalorganic Chemical

Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
T. S. Yeoh ◽  
C. P. Liu ◽  
Y. W. Kim ◽  
J. J. Coleman
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Potential ◽  
Chemical Vapor ◽  
Inas Quantum Dots ◽  
Growth Interruption ◽  
Metalorganic Chemical

ABSTRACTInAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

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