Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

2003 ◽  
Vol 82 (6) ◽  
pp. 841-843 ◽  
Author(s):  
R. L. Sellin ◽  
I. Kaiander ◽  
D. Ouyang ◽  
T. Kettler ◽  
U. W. Pohl ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Dot Lasers ◽  
Self Organized ◽  
Metalorganic Chemical

InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

2013 ◽  
Vol 30 (6) ◽  
pp. 068101 ◽  
Author(s):  
Shuai Luo ◽  
Hai-Ming Ji ◽  
Feng Gao ◽  
Xiao-Guang Yang ◽  
Ping Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Dot Lasers ◽  
Metalorganic Chemical

Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
T. S. Yeoh ◽  
C. P. Liu ◽  
Y. W. Kim ◽  
J. J. Coleman
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Potential ◽  
Chemical Vapor ◽  
Inas Quantum Dots ◽  
Growth Interruption ◽  
Metalorganic Chemical

ABSTRACTInAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 583 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
Uttiya Chowdhury ◽  
Russell D. Dupuis ◽  
Chavva V. Reddy ◽  
Venkatesh Narayanamurti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Self Assembled ◽  
Metalorganic Chemical

AbstractWe report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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