Inhomogeneous strain state in a rectangular InGaAs quantum wire/GaAs barrier specimen prepared for cross sectional high-resolution transmission electron microscopy

2004 ◽  
Vol 96 (3) ◽  
pp. 1644-1648 ◽  
Author(s):  
Yo-Han Yoo ◽  
Woong Lee ◽  
Hyunho Shin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Quantum Wire ◽  
Strain State ◽  
Cross Sectional ◽  
Inhomogeneous Strain ◽  
Transmission Electron ◽  
Gaas Barrier

scholarly journals High Resolution Transmission Electron Microscopy of Metallic Film/Laser-Irradiated Alumina Couples.

1994 ◽  
Vol 357 ◽  
Author(s):  
A. J. Pedraza ◽  
Siqi Cao ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Copper Film ◽  
Interfacial Structure ◽  
Diffuse Interface ◽  
Cross Sectional ◽  
Polycrystalline Alumina ◽  
Near Surface ◽  
Transmission Electron

AbstractA near-surface thin layer is melted when single crystal alumina (sapphire) is pulsed laserirradiated in an Ar-4%H2 atmosphere. γ-alumina grows epitaxially from the (0001) face of axalumina (sapphire) during the rapid solidification of this layer that occurs once the laser pulse is over. Cross sectional high resolution transmission electron microscopy (HRTEM) reveals that the interface between unmelted sapphire and γ-alumina is atomistically flat with steps of one to a few close-packed oxygen layers; however, pronounced lattice distortions exist in the resolidified γ-alumina. HRTEM also is used to study the metal-ceramic interface of a copper film deposited on a laser-irradiated alumina substrate. The observed changes of the interfacial structure relative to that of unexposed substrates are correlated with the strong enhancement of film-substrate bonding promoted by laser irradiation. HRTEM shows that a thin amorphous film is produced after irradiation of 99.6% polycrystalline alumina. Formation of a diffuse interface and atomic rearrangements that can take place in metastable phases contribute to enhance the bonding strength of copper to laser-irradiated alumina.

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

2004 ◽  
Vol 810 ◽  
Author(s):  
H.B. Yao ◽  
D.Z. Chi ◽  
S. Tripathy ◽  
S.Y. Chow ◽  
W.D. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Surface Morphology ◽  
Morphological Stability ◽  
Triple Junctions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Segregation Process

ABSTRACTThe germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Microstructure - Roughness Interelation in Ru/C and Ru/B4C X-RAY Multilayers

1992 ◽  
Vol 280 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortricht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Diffuse Component ◽  
Interfacial Roughness ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Scattering ◽  
Transmission Electron ◽  
Hrtem Observation

ABSTRACTX-ray specular and non-specular scattering, and high-resolution transmission electron microscopy (HRTEM) were performed to study the evolution of the microstructures and interfacial roughness in Ru/C and RU/B4C multilayers upon annealing. The microstructure of the approximately 1.4 nm thick Ru layers in the as-prepared 3.5 nm period multilayers is predominantly amorphous. The Ru layers in the Ru/B4C multilayer show RuB2nano-crystallites after annealing at 600°C for one hour, while those in the Ru/C multilayer crystallize to form hexagonal Ru crystallites. Cross-sectional HRTEM of the annealed Ru/C multilayer also shows agglomeration of the Ru layers. Non-specular measurements of the Ru/C multilayers indicate an enhanced uncorrelated roughness upon annealing. The diffuse component in the as-prepared and annealed RU/B4C multilayers shows insignificant changes. The increase in interfacial roughness in the Ru/C multilayer results from agglomeration of the Ru after annealing, consistent with HRTEM observation.

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