High-speed and high-current density C60 diodes

2004 ◽  
Vol 84 (23) ◽  
pp. 4786-4788 ◽  
Author(s):  
Liping Ma ◽  
Jianyong Ouyang ◽  
Yang Yang
Keyword(s):  
Current Density ◽  
High Speed ◽  
High Current Density ◽  
High Current

Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes

1991 ◽  
Vol 58 (3) ◽  
pp. 275-277 ◽  
Author(s):  
J. R. Söderström ◽  
E. R. Brown ◽  
C. D. Parker ◽  
L. J. Mahoney ◽  
J. Y. Yao ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Speed ◽  
High Current Density ◽  
Resonant Tunneling Diodes ◽  
High Current ◽  
Tunneling Diodes

Analysis on the Anodic Oxide Film of Aluminum Pistons Formed in High Current Density and Wide Temperature Range

2011 ◽  
Vol 189-193 ◽  
pp. 507-511
Author(s):  
Jia Ju An
Keyword(s):  
Current Density ◽  
Wide Temperature Range ◽  
High Speed ◽  
High Current Density ◽  
Anodic Oxide ◽  
High Current ◽  
Temperature Range ◽  
High Speed Forming ◽  
Oxidation Parameters ◽  
Columnar Cells

A process in anodic oxidation with high current density and wide temperature range was researched for high speed forming film on the top surface of aluminum piston. The oxidation parameters is a concentration of 18% H2SO4 solution-based liquid, current density of 5.5～8A/dm2, temperature range－5～20°С , the oxidation time for the 0～60min. Pulse power and cooling equipment co-work to produce the film thickness up to 107μm, film speed was about 1.78μm / min. SEM indicates that the porous layer was made of the regular array columnar “cells” which parallel arrange and grow perpendicular to substrate.

Reliability of InP-based HBTs at High Current Density

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yoshino Fukai
Keyword(s):  
Current Density ◽  
Refractory Metal ◽  
High Speed ◽  
High Current Density ◽  
High Reliability ◽  
Critical Time ◽  
Surface Recombination ◽  
Contact Layer ◽  
Current Gain ◽  
High Current

AbstractInP-based HBTs for ultrahigh speed optical communications systems operation at over 40 GHz require a long-term stability under high current injection conditions, such as current densities of 2 or 5 mA/μm2. We achieved high reliability by suppressing surface recombination and emitter-metal-related crystalline degradation.Changes in the electric properties of devices due to temperature and bias stress were evaluated. The reduction in DC current gain due to surface recombination had the activation energy of 1.7 eV without current density dependence, and the lifetime of HBTs for this degradation mode is predicted to be over 1×108 hours at 125°C. The emitter metal diffusion and disruption of uniformity of the atomic composition were observed by transmission electron microscopy and energy dispersive X-ray spectroscopy in HBTs with the conventional Ti/Pt/Au emitter, whereas suppression of those degradations was observed in HBTs with refractory metal of Mo and W. The emitter resistance was estimated to evaluate the contact layer degradation. The critical time was one order larger for HBTs with refractory metal than for HBTs with conventional metal. The activation energies for resistance increases were 2.0 and 1.65 eV for the current density of 2 and 5 mA/μm2, respectively, for all types of emitter electrodes.The effectiveness of the refractory metal electrode for improving device reliability was confirmed, especially in high-current-density operation, which is essential for applying InP HBTs in high-speed ICs.

Phase transformation of high speed steel after sequential nitrogen and boron high current density ions implantation

2002 ◽  
Vol 158-159 ◽  
pp. 349-355 ◽  
Author(s):  
V.V Uglov ◽  
A.L Kholmetskii ◽  
A.K Kuleshov ◽  
D.P Rusalsky ◽  
I.N Rumyanceva ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Current Density ◽  
High Speed ◽  
High Current Density ◽  
High Speed Steel ◽  
High Current ◽  
Ions Implantation
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