DIRECT OBSERVATION OF THE EXCESS LIGHT HOLE POPULATION IN OPTICALLY PUMPED p‐TYPE GERMANIUM

1966 ◽  
Vol 9 (5) ◽  
pp. 186-187 ◽  
Author(s):  
J. M. Feldman ◽  
K. M. Hergenrother
Keyword(s):  
Direct Observation ◽  
Light Hole ◽  
Optically Pumped ◽  
Excess Light ◽  
P Type

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR01 ◽  
Author(s):  
Tsubasa Matsumoto ◽  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Masahiko Ogura ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Direct Observation ◽  
Electron Injection ◽  
Mos Capacitors ◽  
Electron Injection Layer ◽  
P Type

scholarly journals Direct observation of proton pumping by a eukaryotic P-type ATPase

Science ◽  
2016 ◽  
Vol 351 (6280) ◽  
pp. 1469-1473 ◽  
Author(s):  
S. Veshaguri ◽  
S. M. Christensen ◽  
G. C. Kemmer ◽  
G. Ghale ◽  
M. P. Moller ◽  
...  
Keyword(s):  
Direct Observation ◽  
Proton Pumping ◽  
P Type

Origins of Parasitic Emissions from 353 nm AlGaN-based UV LEDs over SiC Substrates

2005 ◽  
Vol 892 ◽  
Author(s):  
Ji-Soo Park ◽  
Daryl W Fothergill ◽  
Patrick Wellenius ◽  
Seann M. Bishop ◽  
John F. Muth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optically Pumped ◽  
Electron Hole ◽  
Capping Layer ◽  
Uv Emission ◽  
Broad Emission ◽  
Shoulder Peak ◽  
P Type ◽  
Uv Leds ◽  
Hole Recombination

AbstractThe effects of p-GaN capping layers and p-type carrier-blocking layers on the occurrence of parasitic emissions from 353 nm AlGaN-based LEDs have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer showed a shoulder peak at ∼370 nm due to electron overflow into the p-Al0.10Ga0.90N cladding layer and subsequent electron-hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by 420 nm luminescence from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence at ∼520 nm was emitted from the AlGaN layers within the quantum wells.

Direct Observation of the Valence Band Edge by in Situ ECSTM-ECTS in p-Type Cu2O Layers Prepared by Copper Anodization

2008 ◽  
Vol 113 (3) ◽  
pp. 1028-1036 ◽  
Author(s):  
Felipe Caballero-Briones ◽  
Juan M. Artés ◽  
Ismael Díez-Pérez ◽  
Pau Gorostiza ◽  
Fausto Sanz
Keyword(s):  
Valence Band ◽  
Direct Observation ◽  
Band Edge ◽  
Valence Band Edge ◽  
P Type

Heavy-to-light hole intersubband absorption in the valence band of GaAs/AlAs heterostructures

2013 ◽  
Vol 1509 ◽  
Author(s):  
M. I. Hossain ◽  
Z. Ikonic ◽  
J. Watson ◽  
J. Shao ◽  
P. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Diffusion Length ◽  
Careful Analysis ◽  
Light Hole ◽  
Intersubband Transitions ◽  
Intersubband Absorption ◽  
Solid Carbon Source ◽  
P Type ◽  
Theoretical Simulations

ABSTRACTWe performed a thorough investigation of mid-infrared heavy-to-light hole intersubband absorption in the valence band of p-doped GaAs quantum wells with AlAs barriers. For the p-type doping a high-purity solid carbon source was used. The experimental results are compared with theoretical simulations. The inclusion of layer inter-diffusion well reproduces the transition energies. We estimate a 6-10 Å inter-diffusion length that is consistent with electron microscopy measurements. A careful analysis of our results provides valuable information for further design of emitters and detectors based on hole intersubband transitions in the valence band.

Evidence for the light hole in GaAs/AlGaAs quantum wells from optically-pumped NMR and Hanle curve measurements

2014 ◽  
Vol 246 ◽  
pp. 130-135 ◽  
Author(s):  
Erika L. Sesti ◽  
Wieland A. Worthoff ◽  
Dustin D. Wheeler ◽  
Dieter Suter ◽  
Sophia E. Hayes
Keyword(s):  
Quantum Wells ◽  
Light Hole ◽  
Optically Pumped ◽  
Optically Pumped Nmr

Normal Incidence Photoresponse as a Function of Well Width in P-Type GaAs/AlGaAs Multi-Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
G. J. Brown ◽  
M. A. Capano ◽  
S. M. Hegde ◽  
K. Eyink ◽  
F. Szmulowicz
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Light Hole ◽  
Structural Quality ◽  
Hole State ◽  
X Ray Diffraction ◽  
Optimization Study ◽  
P Type

ABSTRACTWe have performed an optimization study of the mid-infrared photoresponse of p-type GaAs/AlGaAs Quantum Well Infrared Photodetectors (QWIPs) designed for normal incidence detection. In these p-type quantum wells, normal incidence absorption is allowed (by the dipole selection rules for optical transitions) especially for transitions from the heavy-hole ground state to the second light-hole state. Previous theoretical modeling predicted that this transition will produce the strongest bound-to-continuum infrared absorption when the second light-hole state is located very near the top of the GaAs quantum well. For AlGaAs barrier layers with 30% aluminum, our modeling showed that a well width between 45Å and 50Å would optimize the normal incidence photoresponse of this p-type QWIP. In this work, photore^oonse spectra are reported for well widths ranging from 40Å to 65Å. A series of samples were tudied in which only the GaAs well width was varied in two monolayer increments, from 11 to 20 monolayers. Photoluminescence and X-ray diffraction measurements were used to verify the composition, well width, and structural quality of each sample. This study verified that the spectral range of the normal incidence photoresponse is narrower, as predicted by theory, for well widths in which the second light-hole state approaches the top of the valence band well.

scholarly journals INVESTIGATION OF THE LIGHT HOLE IN p-TYPE Hg1-xCdxTe

2000 ◽  
Vol 49 (5) ◽  
pp. 959
Author(s):  
JIANG CHUN-PING ◽  
GUI YONG-SHENG ◽  
ZHENG GOU-ZHEN ◽  
MA ZHI-XUN ◽  
WANG SHAN-LI ◽  
...  
Keyword(s):  
Light Hole ◽  
P Type
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