OBSERVATION OF A SUPERRADIANT SELF‐TERMINATING GREEN LASER TRANSITION IN NEON

1965 ◽  
Vol 7 (6) ◽  
pp. 175-175 ◽  
Author(s):  
Donald A. Leonard ◽  
Richard A. Neal ◽  
Edward T. Gerry
Keyword(s):  
Green Laser ◽  
Laser Transition

APPLICABLE STUDY OF UAV GREEN LASER SCANNER FOR MAINTENANCE OF COASTAL CONSERVATION FACILITY

2020 ◽  
Vol 76 (2) ◽  
pp. I_1393-I_1398
Author(s):  
Shinji NAKAYAMA ◽  
Yoshiki ORITANI ◽  
Tetsuya TAKESHITA ◽  
Takayuki ISHII ◽  
Kintoki TANAKA ◽  
...  
Keyword(s):  
Laser Scanner ◽  
Green Laser ◽  
Coastal Conservation

scholarly journals Generation of shock trains in free liquid jets with a nanosecond green laser

2020 ◽  
Vol 5 (12) ◽  
Author(s):  
Daniel Ursescu ◽  
Veselin Aleksandrov ◽  
Dan Matei ◽  
Ioan Dancus ◽  
Matias D. de Almeida ◽  
...  
Keyword(s):  
Green Laser ◽  
Liquid Jets

scholarly journals Laser metal deposition of copper on diverse metals using green laser sources

2020 ◽  
Vol 107 (3-4) ◽  
pp. 1559-1568 ◽  
Author(s):  
Himani Siva Prasad ◽  
Frank Brueckner ◽  
Joerg Volpp ◽  
Alexander F. H. Kaplan
Keyword(s):  
Green Laser ◽  
Metal Deposition ◽  
Laser Metal Deposition ◽  
Laser Sources

scholarly journals Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 690
Author(s):  
Leonardo Ranasinghe ◽  
Christian Heyn ◽  
Kristian Deneke ◽  
Michael Zocher ◽  
Roman Korneev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Penetration Depth ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Green Laser ◽  
Significant Loss ◽  
Blue Laser ◽  
Ambient Conditions ◽  
Thermal Escape ◽  
Intensity Loss

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

scholarly journals Conduction-band states and the 5d-4f laser transition of rare-earth ion dopants

1997 ◽  
Author(s):  
Stephen A. Payne ◽  
Christopher D. Marshall ◽  
Andy J. Bayramian ◽  
Janice K. Lawson
Keyword(s):  
Rare Earth ◽  
Conduction Band ◽  
Rare Earth Ion ◽  
Laser Transition
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