Effect of Radiation Damage on the Response of Semiconductor Detectors to Fission Fragments

1964 ◽  
Vol 35 (7) ◽  
pp. 842-846 ◽  
Author(s):  
H. C. Britt ◽  
G. C. Benson
1986 ◽  
Vol 84 ◽  
Author(s):  
T.D. Mark ◽  
W. Ritter

AbstractAnnealing of radiation damage in artificial sodium silica glass has been studied by absorption spectroscopy for different radiation sources (fission fragments produced by n,f reactions, alpha decays produced by n, α reactions, and 2 MeV electrons) as a function of annealing time and temperature. The annealing observed can be described best by a single exponential functionA(t) = a exp (− αt)with an Arrhenius type temperature dependence of the annealing coefficient αα(T) = α0 exp (− EA/kT)For the three different radiation sources similar activitation energies EA were deduced from the data. Possible annealing processes are discussed.


1972 ◽  
Vol 19 (1) ◽  
pp. 91-99 ◽  
Author(s):  
Fred S. Goulding ◽  
Richard H. Pehl

1975 ◽  
Vol 125 (3) ◽  
pp. 365-372 ◽  
Author(s):  
H. Henschel ◽  
H. Hipp ◽  
A. Kohnle ◽  
F. Gönnenwein

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