Response of Semiconductor Detectors to Fission Fragments

1963 ◽  
Vol 34 (7) ◽  
pp. 822-822 ◽  
Author(s):  
Herbert Flicker
Keyword(s):  
Semiconductor Detectors ◽  
Fission Fragments

The influence of plasma effects on the timing of fission fragments with semiconductor detectors

1975 ◽  
Vol 125 (3) ◽  
pp. 365-372 ◽  
Author(s):  
H. Henschel ◽  
H. Hipp ◽  
A. Kohnle ◽  
F. Gönnenwein
Keyword(s):  
Semiconductor Detectors ◽  
Fission Fragments ◽  
Plasma Effects

Resolution of Semiconductor Detectors for Fission Fragments

1965 ◽  
Vol 36 (9) ◽  
pp. 1385-1386 ◽  
Author(s):  
Eldon L. Haines ◽  
A. Bruce Whitehead
Keyword(s):  
Semiconductor Detectors ◽  
Fission Fragments

Response of Semiconductor Detectors to Fission Fragments

1963 ◽  
Vol 34 (3) ◽  
pp. 274-277 ◽  
Author(s):  
H. C. Britt ◽  
H. E. Wegner
Keyword(s):  
Semiconductor Detectors ◽  
Fission Fragments

scholarly journals Degradation of silicon detectors under long-term irradiation by 252Cf fission products

2021 ◽  
Vol 2103 (1) ◽  
pp. 012138
Author(s):  
S V Bakhlanov ◽  
A V Derbin ◽  
I S Drachnev ◽  
O I Konkov ◽  
I M Kotina ◽  
...  
Keyword(s):  
Neutron Source ◽  
Neutron Emission ◽  
Fission Products ◽  
Surface Barrier ◽  
Semiconductor Detectors ◽  
Silicon Detectors ◽  
Calibration Source ◽  
Correct Operation ◽  
Fission Fragments ◽  
Barrier Detectors

Abstract The response function of the recoil nuclei in detectors designed for detection of neutrinos or dark matter particles can be determined only through usage of a neutron source with a known energy spectrum. A possible solution for a compact neutron calibration source is a combination of a 252Cf neutron source and a semiconductor detector that detects fission fragments, and thus records the neutron emission moment. This work is devoted to the degradation study of the operating parameters for silicon semiconductor detectors irradiated by fission fragments of the nuclide of 252 Cf. Two types of Si detectors were under investigations - silicon-lithium Si(Li) p-i-n detectors and silicon surface barrier detectors. As a result of the measurements, the maximum permissible radiation doses for the correct operation of both types of detectors and the relation of the received radiation dose to the spectroscopic characteristics of the detectors were determined.

Parallel Detection of Electron Energy Loss Spectra in Direct Mode

1990 ◽  
Vol 48 (2) ◽  
pp. 82-83
Author(s):  
Eckhard Quandt ◽  
Stephan laBarré ◽  
Andreas Hartmann ◽  
Heinz Niedrig
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Energy Resolution ◽  
Large Angle ◽  
Maximum Energy ◽  
Semiconductor Detectors ◽  
Parallel Detection ◽  
Photodiode Arrays ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

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