Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate

2004 ◽  
Vol 95 (12) ◽  
pp. 8484-8486 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Si Substrate

C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer

1981 ◽  
Vol 39 (1) ◽  
pp. 89-90 ◽  
Author(s):  
Akira Suzuki ◽  
Kazunobu Mameno ◽  
Nobuyuki Furui ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Thermally Grown

Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals

2010 ◽  
Vol 97 (18) ◽  
pp. 182103 ◽  
Author(s):  
Sejoon Lee ◽  
Youngmin Lee ◽  
Yoon Shon ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Metal Oxide ◽  
Transport Properties ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Tunneling Transport

Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress

1987 ◽  
Vol 105 ◽  
Author(s):  
D. Vuillaume ◽  
H. Lakhdari ◽  
J. C. Bourgoin ◽  
R. Bouchakour ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Strong Dependence ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Mos Structure ◽  
The Creation ◽  
Kinetics Of

AbstractWe study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states ( i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (MOS) structure is submitted to a high field electrons injection from the Si substrate. We have analysed the creation kinetics of these slow states in order to compare with the behavior of the fast interface states which are better studied. We demonstrate that the fast interface states are more rapidly generated than the slow states and that the creation kinetics of fast states reach a saturation at lower injected charge. We also find that the fast interface states generation is independent from the energetical location of the states in the Si bandgap. For the generation of slow states, we observe a weak dependence on the energetical location of the defects in the SiO2 bandgap, and a strong dependence on the depth location from the Si-SiO2 interface.

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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