Near-bandedge cathodoluminescence of an AlN homoepitaxial film

2004 ◽  
Vol 84 (18) ◽  
pp. 3501-3503 ◽  
Author(s):  
E. Silveira ◽  
J. A. Freitas ◽  
M. Kneissl ◽  
D. W. Treat ◽  
N. M. Johnson ◽  
...  
Keyword(s):  
Homoepitaxial Film

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

2021 ◽  
Vol 118 (25) ◽  
pp. 252101
Author(s):  
Takeyoshi Onuma ◽  
Kohei Sasaki ◽  
Tomohiro Yamaguchi ◽  
Tohru Honda ◽  
Akito Kuramata ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Free Charge Carrier ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Free Charge ◽  
Homoepitaxial Film

Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film

2009 ◽  
Vol 39 (10) ◽  
pp. 2243-2247 ◽  
Author(s):  
Fuxue Wang ◽  
Hai Lu ◽  
Xiangqian Xiu ◽  
Dunjun Chen ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Bulk Gan ◽  
Homoepitaxial Film

Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film

2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6320-6326 ◽  
Author(s):  
Tatsuya Okada ◽  
Tsunenobu Kimoto ◽  
Hiroshi Noda ◽  
Takahiro Ebisui ◽  
Hiroyuki Matsunami ◽  
...  
Keyword(s):  
Crystallographic Defects ◽  
Homoepitaxial Film

Strong Room‐Temperature Ferroelectricity in Strained SrTiO 3 Homoepitaxial Film

2021 ◽  
pp. 2008316
Author(s):  
Tianyu Li ◽  
Dengshi Qing ◽  
Hui Liu ◽  
Shengdong Sun ◽  
Hao Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Homoepitaxial Film

Modeling of Metal(100) Homoepitaxial Film Growth at Very Low Temperatures

2000 ◽  
Vol 619 ◽  
Author(s):  
K.J. Caspersen ◽  
C.R. Stoldt ◽  
P.A. Thiel ◽  
J.W. Evans
Keyword(s):  
Low Temperatures ◽  
Film Growth ◽  
Diffusion Processes ◽  
Variable Temperature ◽  
Scanning Tunneling ◽  
Film Morphology ◽  
Tunneling Microscopy ◽  
Adsorption Sites ◽  
Temperature Scanning ◽  
Homoepitaxial Film

ABSTRACTWe model the growth of Ag films deposited on Ag(100) below 140K. Our recent Variable-Temperature Scanning Tunneling Microscopy (VTSTM) studies reveal “smooth growth” from 120-140K, consistent with earlier diffraction studies. However, we also find rougher growth for lower temperatures. This unexpected behavior is modeled by describing the deposition dynamics using a “restricted downward funneling” model, wherein deposited atoms get caught on the sides of steep nanoprotrusions (which are prevalent below 120K), rather than always funneling down to lower four-fold hollow adsorption sites. At OK, where no thermal diffusion processes are operative, this leads to the formation of overhangs and internal defects (or voids). Above 40K, low barrier interlayer diffusion processes become operative, producing the observed smooth growth by 120K. We also discuss how the apparent film morphology mapped out by the STM tip “smears” features of the actual film morphology (which are small at low temperature), and also can lead to underestimation of the roughness.

Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film

1996 ◽  
Vol 35 (Part 2, No. 10B) ◽  
pp. L1318-L1320 ◽  
Author(s):  
Tatsuya Okada ◽  
Satoshi Kurai ◽  
Yoshiki Naoi ◽  
Katsushi Nishino ◽  
Fukuji Inoko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Transmission Electron ◽  
Homoepitaxial Film

scholarly journals Liquid‐metal‐mediated homoepitaxial film growth of Ge at low temperature

1991 ◽  
Vol 59 (27) ◽  
pp. 3586-3588 ◽  
Author(s):  
Fulin Xiong ◽  
Eric Ganz ◽  
A. G. Loeser ◽  
J. A. Golovchenko ◽  
Frans Spaepen
Keyword(s):  
Low Temperature ◽  
Liquid Metal ◽  
Film Growth ◽  
Homoepitaxial Film

Simple Processing of ZnO from Solution: Homoepitaxial Film and Bulk Single Crystal

2008 ◽  
Vol 8 (8) ◽  
pp. 2814-2820 ◽  
Author(s):  
Dirk Ehrentraut ◽  
Miyuki Miyamoto ◽  
Hideto Sato ◽  
Jürgen Riegler ◽  
K. Byrappa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bulk Single Crystal ◽  
Simple Processing ◽  
Homoepitaxial Film
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