Simple Processing of ZnO from Solution: Homoepitaxial Film and Bulk Single Crystal

2008 ◽  
Vol 8 (8) ◽  
pp. 2814-2820 ◽  
Author(s):  
Dirk Ehrentraut ◽  
Miyuki Miyamoto ◽  
Hideto Sato ◽  
Jürgen Riegler ◽  
K. Byrappa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bulk Single Crystal ◽  
Simple Processing ◽  
Homoepitaxial Film

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Optical Absorption of CuInSe2 in Bulk Single Crystal

1981 ◽  
Vol 108 (1) ◽  
pp. K19-K22 ◽  
Author(s):  
C. Rincón ◽  
J. González ◽  
G. Sanchez Perez
Keyword(s):  
Optical Absorption ◽  
Single Crystal ◽  
Bulk Single Crystal

Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography

2008 ◽  
Vol 47 (7) ◽  
pp. 5576-5580 ◽  
Author(s):  
Passapong Wutimakun ◽  
Taichiro Mori ◽  
Hisashi Miyazaki ◽  
Yoichi Okamoto ◽  
Jun Morimoto ◽  
...  
Keyword(s):  
Light Scattering ◽  
Single Crystal ◽  
Three Dimensional ◽  
Bulk Single Crystal ◽  
Defect Distribution

A Study on Radial and Axial Temperature Effects on the Growth of Bulk Single Crystal of SixGe1-x in Bridgman Setting

2021 ◽  
Author(s):  
Mehdi Mohammadi Shemirani
Keyword(s):  
Single Crystal ◽  
Temperature Effects ◽  
Bulk Single Crystal ◽  
Axial Temperature

A Study on Radial and Axial Temperature Effects on the Growth of Bulk Single Crystal of SixGe1-x in Bridgman Setting

scholarly journals Modification of the yellow luminescence in gamma-ray irradiated GaN bulk single crystal

2017 ◽  
Vol 864 ◽  
pp. 012016 ◽  
Author(s):  
Y. Torita ◽  
N. Nishikata ◽  
K. Kuriyama ◽  
K. Kushida ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gamma Ray ◽  
Bulk Single Crystal ◽  
Yellow Luminescence

Bulk single crystal growth of silicon-germanium

2000 ◽  
Vol 29 (9) ◽  
pp. 1074-1078 ◽  
Author(s):  
Richard H. Deitch ◽  
Stephen H. Jones ◽  
Thomas G. Digges
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Silicon Germanium ◽  
Single Crystal Growth ◽  
Bulk Single Crystal
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