Effect of Pressure on Self‐Diffusion in Lead

1959 ◽  
Vol 31 (1) ◽  
pp. 135-138 ◽  
Author(s):  
Norman H. Nachtrieb ◽  
Henry A. Resing ◽  
Stuart A. Rice
Keyword(s):  
Effect Of Pressure ◽  
Self Diffusion

Effect of pressure and temperature of the self-diffusion of water

1974 ◽  
Vol 14 (6) ◽  
pp. 911-914 ◽  
Author(s):  
V. V. Kisel'nik ◽  
N. G. Malyuk ◽  
A. N. Toryanik ◽  
V. M. Toryanik
Keyword(s):  
The Self ◽  
Effect Of Pressure ◽  
Self Diffusion

The Effect of Pressure on Self‐Diffusion in Carbon Disulfide

1953 ◽  
Vol 21 (2) ◽  
pp. 267-273 ◽  
Author(s):  
R. C. Koeller ◽  
H. G. Drickamer
Keyword(s):  
Carbon Disulfide ◽  
Effect Of Pressure ◽  
Self Diffusion

Effect of Pressure on Self‐Diffusion in White Phosphorus

1955 ◽  
Vol 23 (7) ◽  
pp. 1193-1195 ◽  
Author(s):  
Norman H. Nachtrieb ◽  
A. W. Lawson
Keyword(s):  
White Phosphorus ◽  
Effect Of Pressure ◽  
Self Diffusion

Self‐Diffusion in Solid Sodium. II. The Effect of Pressure

1952 ◽  
Vol 20 (8) ◽  
pp. 1189-1194 ◽  
Author(s):  
N. H. Nachtrieb ◽  
J. A. Weil ◽  
E. Catalano ◽  
A. W. Lawson
Keyword(s):  
Effect Of Pressure ◽  
Self Diffusion

scholarly journals Effect Of Pressure On Boron Diffusion In Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
Yuechao Zhao ◽  
Michael J. Aziz ◽  
Salman Mitha ◽  
David Schiferl
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Boron Diffusion ◽  
Effect Of Pressure ◽  
Self Diffusion ◽  
Pressure Medium ◽  
Atomistic Calculations ◽  
Fluid Argon ◽  
Homoepitaxial Layers ◽  
Strained Films

AbstractWe are studying the effect of pressure on boron diffusion in silicon in order to better understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers deltadoped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities were deduced from B concentration-depth profiles measured with using secondary ion mass spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 °C, characterized by an average activation volume of -0.125±0.02 times the atomic volume, and thus appear consistent with an interstitial-based diffusion mechanism. Results are compared with previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic calculations of activation volumes for self diffusion.

Effect of Pressure on Self Diffusion in Crystalline Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
M. J. Aziz ◽  
E. Nygren ◽  
W. H. Christie ◽  
C. W. White ◽  
D. Turnbull
Keyword(s):  
Pressure Range ◽  
High Pressures ◽  
Activation Volume ◽  
Crystalline Silicon ◽  
Tracer Diffusion ◽  
Effect Of Pressure ◽  
Self Diffusion

ABSTRACTThe effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.

Effect of pressure on structure and fluorescence of SrFCL: Sm2

1990 ◽  
Vol 3 (1) ◽  
pp. 144-146
Author(s):  
Y. R. Shen ◽  
T. Gregorian ◽  
Th. Tröster ◽  
O. Schulte ◽  
W. B. Holzapfel
Keyword(s):  
Effect Of Pressure
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