Effect of Pressure on Self Diffusion in Crystalline Silicon
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ABSTRACTThe effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.
1978 ◽
Vol 234
(4)
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pp. H371-H383
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2019 ◽
1974 ◽
Vol 14
(6)
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pp. 911-914
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1997 ◽
Vol 55
(21)
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pp. 14279-14289
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1971 ◽
Vol 26
(2)
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pp. 291-299
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1963 ◽
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