Method for Evaluating the Quality of an Epitaxial Overgrowth Layer of Silicon on a Single‐Crystal Silicon Seed

1962 ◽  
Vol 33 (7) ◽  
pp. 2301-2304 ◽  
Author(s):  
D. M. Jackson ◽  
J. B. Newkirk ◽  
M. J. Urban
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Xps Studies of Hydrogen and Oxygen Bondinguy Configurations in Hydrogenated Microcrystalline Silicon Materials Produced by Neutron Irradiation

1992 ◽  
Vol 283 ◽  
Author(s):  
Y. C. Koo ◽  
G. C. Weatherly ◽  
R. Sodhi ◽  
S. J. Thorpet ◽  
K. T. Austt
Keyword(s):  
Charge Transfer ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Volume Fraction ◽  
Analytical Electron Microscopy ◽  
Single Crystal Silicon ◽  
High Volume ◽  
Electron Diffraction Data ◽  
Crystal Silicon

ABSTRACTThe bonding of Si atoms in μc-Si:H thin films has been investigated using X-ray photoelectron spectroscopy (XPS) in conjunction with infra-red spectroscopy (IR), secondary ion mass spectroscopy (SIMS) and analytical electron microscopy (TEM/EDX/EELS) data. By using a-Si:H and single crystal silicon as reference samples, structural and hydrogen effects could be assessed, since both a-Si:H and μc-Si:H have a similar concentration of hydrogen based on the N15 hydrogen profiling data, but different structures. On the other hand, single crystal silicon and μc-Si:H both have a diamond cubic structure based on electron diffraction data, but single crystal silicon contains little or no hydrogen except adsorbed at the surface. Based on the XPS and IR data, charge transfer of the Si2p core level towards a deep lying level was observed in the μc-Si:H material. IR measurements snowed a large amount of hydrogen was located in the grain boundaries. The charge transfer is mainly due to a change in the hydrogen bonding configuration. A well bonded oxide is formed in the μc-Si:H material near the surface with an almost complete absence of the Si3+ intermediate oxide state. The presence of a large amount of hydrogen (25 at.%) even at a high volume fraction (70%) of μc-phase may limit the oxidation and promote better oxide formation. The variation of the quality of the oxide/μc interface could be a possible explanation for the different photoluminescence observed by various groups for porous μc-Si material.

Microstructure of buried nitride films in silicon formed by implanted nitrogen

1986 ◽  
Vol 44 ◽  
pp. 734-735
Author(s):  
A. K. Datye ◽  
S. S. Tsao ◽  
D. R. Myers
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Amorphous Layer ◽  
Nitride Layer ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Defective Surface

High fluence ion implantation of nitrogen ions in silicon is currently of great interest in the formation of silicon on insulator (SOI) structures. After ion implantation, the single crystal silicon water usually exhibits a highly defective surface layer followed by an amorphous layer corresponding to the peak of the nitrogen implant profile. Annealing the sample at ∽ 1200 C yields a buried layer of silicon nitride underneath a top layer of single crystal silicon. The Quality of the single crystal silicon, buried nitride and the silicon/silicon nitride interface is of paramount importance from the standpoint of device design. We have used high resolution cross section TEM to examine the Si/nitride interface and the buried nitride layer.

On Mechanism Of Nickel Diffusion During Metal Induced Lateral Crystallization Of Amorphous Silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
A.M. Myasnikov ◽  
M.C. Poon ◽  
P.C. Chan ◽  
K.L. Ng ◽  
M.S. Chan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Single Crystal Silicon ◽  
Recrystallization Process ◽  
Crystal Silicon ◽  
Lateral Crystallization

AbstractDuring metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

scholarly journals Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3085
Author(s):  
Jiaqi Zhang ◽  
Yichang Wu ◽  
Guofang Yang ◽  
Dazheng Chen ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect Transistors ◽  
Sacrificial Layer ◽  
Single Crystal Silicon ◽  
Oxide Semiconductor ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Crystal Silicon ◽  
Wet Chemical

As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO2 sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.

scholarly journals Prediction And Verification of Wafer Surface Morphology in Ultrasonic Vibration Assisted Wire Saw (UAWS) Slicing Single Crystal Silicon Based On Mixed Material Removal Mode

2021 ◽  
Author(s):  
Yan Wang ◽  
Rui Wang ◽  
Shusheng Li ◽  
Jianguo Liu ◽  
Lixing Song
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Surface Quality ◽  
Single Crystal Silicon ◽  
Wafer Surface ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Mixed Material ◽  
Material Removal Mode

Abstract Monocrystalline silicon is one of the most important semiconductor materials, widely used in chip manufacturing, solar panels. Slicing is the first step in making chips and the surface quality of silicon wafers directly affects the quality of later processing and accounts for a large proportion in the chip manufacturing cost. Ultrasonic vibration assisted wire saw (UAWS) is an effective sawing process for cutting hard and brittle materials such as monocrystalline Si, which can significantly improve the surface quality of silicon wafers. In order to further study the formation mechanism of the surface morphology of single crystal silicon sliced by UAWS, a new model for prediction of wafer surface morphology in UAWS slicing single crystal silicon based on mixed material removal mode is presented and verified in this paper. Firstly, the surface model of diamond wire saw tool is established by equal probability method. Then according to the equation of transverse vibration dynamics about the wire saw with ultrasonic excitation, the trajectory equation of arbitrary abrasive particles on the surface of wire saw is derived and analyzed. Thirdly, a new model for prediction of the wafer surface morphology based on mixed material removal mode is presented, which can be used to predict the wafer surface morphology of single crystal silicon sliced by UAWS. Finally, the prediction model is verified by UAWS slicing experiment, and the effects of slicing parameters such as wire saw speed, feed speed and workpiece rotate speed on the surface quality of silicon wafer were studied. It shows that the predicted wafer surface morphology and the experimental wafer surface morphology are similar in some characteristics, and the average error between the experimental and the theoretical values of the wafer surface roughness is 11.9%, which verifies the validity of the prediction model.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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