Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires

2004 ◽  
Vol 84 (17) ◽  
pp. 3358-3360 ◽  
Author(s):  
Tae-Won Kim ◽  
Tadashi Kawazoe ◽  
Shunsuke Yamazaki ◽  
Motoichi Ohtsu ◽  
Takashi Sekiguchi
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Zno Nanowires ◽  
Selective Growth ◽  
Ultraviolet Emission

Low-temperature growth of ZnO nanowires

2003 ◽  
Vol 18 (3) ◽  
pp. 714-718 ◽  
Author(s):  
Yung-Kuan Tseng ◽  
I-Nan Lin ◽  
Kuo-Shung Liu ◽  
Tzer-Shen Lin ◽  
I-Cherng Chen
Keyword(s):  
Low Temperature ◽  
Near Infrared ◽  
Gold Catalyst ◽  
Zno Nanowires ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Wurtzite Phase ◽  
Ultraviolet Emission ◽  
Temperature Growth ◽  
Low Temperature Growth

ZnO nanowires with diameters of 40–200 nm were grown with a gold catalyst in bulk quantities on alumina substrates and sapphire substrates. This synthesis procedure was achieved by heating a 1:1 mixture of ZnO and Zn powder to 500 °C with trace water vapor as an oxidizer. X-ray diffraction and transmission electron microscopy revealed that the nanowires were in the pure wurtzite phase. Photoluminescence spectroscopy showed two peaks: one was a strong ultraviolet emission at around 380 nm, which corresponds to the near-band-edge emission; the other was a weak near-infrared emission around 750 nm, which indicates a low concentration of oxygen vacancy. Moreover, we observed that the Zn/Au alloy droplets appeared on the tips of ZnO nanowires. As a consequence, we can select areas to grow ZnO nanowires by patterning the thin metal film on the substrates. These findings prove that the low-temperature growth mechanism is via vapor–liquid–solid rather than vapor transport deposition or vapor supersaturation (vapor–solid) mechanism. On the basis of the site-specific growth and the low-temperature requirement developed from this work, the synthesis of ZnO is compatible to microelectric machining system processing.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Low temperature acoustic characterization of PMN single crystal

2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Acoustic Characterization

Spin-crossover iron(II) long-chain complex with slow spin equilibrium at low temperature

2021 ◽  
Author(s):  
Qi Zhao ◽  
Jin-Peng Xue ◽  
Zhi-Kun Liu ◽  
Zi-Shuo Yao ◽  
Jun Tao
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Spin Crossover ◽  
Chain Complex ◽  
Mononuclear Complex ◽  
X Ray ◽  
Alkyl Chains ◽  
Long Chain

A mononuclear complex with long alkyl chains, [FeII(H2Bpz2)2(C9bpy)] (1; H2Bpz2 = dihydrobis(1-pyrazolyl)borate, C9bpy = 4,4'-dinonyl-2,2'-bipyridine), was synthesized. Single-crystal X-ray crystallographic studies revealed that - and - forms of the complex...

Low-temperature magnetic and transport properties of single-crystal CeCoGe

2008 ◽  
Vol 20 (46) ◽  
pp. 465223 ◽  
Author(s):  
M ElMassalami ◽  
R E Rapp ◽  
J P Sinnecker ◽  
A V Andreev ◽  
J Prokleska
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Transport Properties

Low-temperature magnetization and flux creep studies of a DyBa2Cu3O7 single crystal with a vibrating reed

1995 ◽  
Vol 246 (1-2) ◽  
pp. 123-132 ◽  
Author(s):  
K. Rogacki ◽  
P. Esquinazi ◽  
E. Faulhaber ◽  
W. Sadowski
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Flux Creep ◽  
Vibrating Reed

Low-Temperature Physical Properties of Polycrystal and Single Crystal ofCePt2Sn2

1996 ◽  
Vol 65 (5) ◽  
pp. 1186-1188 ◽  
Author(s):  
Naoya Takeda ◽  
Masayasu Ishikawa ◽  
Toshiro Takabatake ◽  
Toru Shigeoka
Keyword(s):  
Low Temperature ◽  
Physical Properties ◽  
Single Crystal
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