Technique for Absolute Temperature Measurements at Microwave Frequencies

1967 ◽  
Vol 38 (8) ◽  
pp. 1093-1096 ◽  
Author(s):  
George G. Haroules ◽  
Wilfred E. Brown
2010 ◽  
Author(s):  
Jason Bundas ◽  
Richard Dennis ◽  
Kelly Patnaude ◽  
Douglas Burrows ◽  
Ross Faska ◽  
...  

2021 ◽  
Vol 3 ◽  
Author(s):  
Johannes Boyer ◽  
Jakob Eckmann ◽  
Karl Strohmayer ◽  
Werner Koele ◽  
Moritz Federspiel ◽  
...  

Since the human body reacts to a variety of different diseases with elevated body temperature, measurement of body temperature remains relevant in clinical practice. The absolute temperature value for fever definition is still arbitrary and depends on the measuring site, as well as underlying disease and individual factors. Hence, a simple threshold for fever definition is outdated and a definition which relies on the relative changes in the individual seems reasonable as it takes these individual factors into account. In this prospective multicentric study we validate an adhesive axillary thermometer (SteadyTemp®) which allows continuous non-invasive temperature measurements. It consists of a patch to measure temperature and a smartphone application to process and visualize gathered data. This article provides information of the new diagnostic possibilities when using this wearable device and where it could be beneficial. Furthermore, it discusses how to interpret the generated data and when it is not practical to use, based on its characteristics and physiological phenomena.


Author(s):  
Christian Schmidt ◽  
Frank Altmann ◽  
Giorgio C. Mutinati ◽  
Elise Brunet ◽  
Stephan Steinhauer ◽  
...  

Abstract In this paper, investigations on absolute temperature measurements using IR-Thermography of CMOS integrated micro-hot-plates (μHP) are presented. The results of using two different approaches, emissivity correction and black paint coating, are presented and compared with respect to simulation and electrical testing results. In addition, FIB/SEM investigations were used for surface investigations and determination of possible influences to the thermal behaviour by black paint coating process.


2020 ◽  
Vol 316 ◽  
pp. 112385
Author(s):  
Petr Volkov ◽  
Daniil Semikov ◽  
Аlexander Goryunov ◽  
Аndrey Luk'yanov ◽  
Аnatoly Tеrtyshnik ◽  
...  

1940 ◽  
Vol 18b (4) ◽  
pp. 103-117 ◽  
Author(s):  
S. G. Mason ◽  
S. N. Naldrett ◽  
O. Maass

A careful study has been made of the position and nature of the meniscus and the distribution of opalescence in bombs containing ethane as the critical temperature is approached. Photographs of the phenomena have been made. The effect of shaking has been observed, and a type of shaking is described that is believed to hasten the attainment of equilibrium between the liquid and vapour phases. Using this type of stirring the coexistence curve of ethane has been determined. Relative temperature measurements are accurate to within ± 0.001 ° C.; absolute temperature measurements, to within ± 0.015 °C. Density measurements are believed accurate to within 1:3000. The limiting curve has the classical parabolic shape up to 32.23 °C., at which point the slope changes abruptly and the curve becomes flat along the density axis. The authors believe that at this temperature a dispersion of liquid and vapour occurs and that liquid still persists above this temperature. It is shown that the critical temperature as ordinarily determined in a stationary bomb cannot be accurately determined. The critical temperature can be determined precisely and without ambiguity when the bomb is shaken, and it is recommended that the value obtained in this way be used instead, as a physical measurement.


1960 ◽  
Vol 3 (5) ◽  
pp. 397-402 ◽  
Author(s):  
A. D. Brodskii ◽  
A. V. Savateev

2005 ◽  
Vol 483-485 ◽  
pp. 283-286 ◽  
Author(s):  
Sakwe Aloysius Sakwe ◽  
Z.G. Herro ◽  
Peter J. Wellmann

Etching temperature and time are important parameters in the etching of SiC single crystals in molten KOH for defect studies. However, comparison of results of different research groups is difficult because of the way temperature measurements are being carried out. Until now the temperature of the melt has been measured indirectly with a temperature sensor placed outside the melt on the outer walls of the crucible of the etching furnace, resulting in varying etching conditions for varying setup designs. In this paper we developed an etching furnace with the capability of measuring the absolute temperature in-situ directly in the KOH melt. A new thermoelement, resistant to hot molten KOH was developed. Temperature profile measurements of the molten KOH were carried out and a calibration curve of the furnace was obtained. Based on our temperature measurements, we found that etching at 530 °C for 5 minutes was optimal for defect characterisation, both for defect statistics and for distinguishing between the etch pit morphologies. At 550 °C the etch pits become too large, overlap each other and the etching is no longer defect selective.


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