Pulse Height Defect and Energy Dispersion in Semiconductor Detectors

1966 ◽  
Vol 37 (2) ◽  
pp. 190-194 ◽  
Author(s):  
Eldon L. Haines ◽  
A. Bruce Whitehead
Keyword(s):  
Pulse Height ◽  
Semiconductor Detectors ◽  
Energy Dispersion

The pulse height defect in semiconductor detectors

1965 ◽  
Vol 32 (1) ◽  
pp. 70-76 ◽  
Author(s):  
R.C. Axtmann ◽  
D. Kedem
Keyword(s):  
Pulse Height ◽  
Semiconductor Detectors

A New Waveform Signal Processing Method Based on Adaptive Clustering-Genetic Algorithms

2006 ◽  
Author(s):  
Noha Shaaban ◽  
Fukuzo Masuda ◽  
Hidetsugu Morota
Keyword(s):  
Signal Processing ◽  
Genetic Algorithms ◽  
Pulse Height ◽  
Digital Signal ◽  
Processing Method ◽  
Pulse Height Spectrum ◽  
Semiconductor Detectors ◽  
Shape Variation ◽  
Signal Shape ◽  
Signal Processing Method

We present a fast digital signal processing method for numerical analysis of individual pulses from CdZnTe compound semiconductor detectors. Using Maxi-Mini Distance Algorithm and Genetic Algorithms based discrimination technique. A parametric approach has been used for classifying the discriminated waveforms into a set of clusters each has a similar signal shape with a corresponding pulse height spectrum. A corrected total pulse height spectrum was obtained by applying a normalization factor for the full energy peak for each cluster with a highly improvements in the energy spectrum characteristics. This method applied successfully for both simulated and real measured data, it can be applied to any detector suffers from signal shape variation.

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

2015 ◽  
Vol 821-823 ◽  
pp. 875-878 ◽  
Author(s):  
Fatima Issa ◽  
Laurent Ottaviani ◽  
Vanessa Vervisch ◽  
Dora Szalkai ◽  
Ludo Vermeeren ◽  
...  
Keyword(s):  
Thermal Neutron ◽  
Leakage Current ◽  
Signal To Noise Ratio ◽  
Pulse Height ◽  
Semiconductor Detectors ◽  
Signal To Noise ◽  
Metallic Contact ◽  
Thermal Neutron Irradiation ◽  
Before And After ◽  
Noise Ratio

Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation.

scholarly journals Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

2020 ◽  
Vol 50 ◽  
pp. 2060017
Author(s):  
Katarína Sedlačková ◽  
Bohumír Zaťko ◽  
Márius Pavlovič ◽  
Andrea Šagátová ◽  
Vladimír Nečas
Keyword(s):  
Schottky Barrier ◽  
Electron Irradiation ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Pulse Height ◽  
Radiation Detectors ◽  
Peak Position ◽  
Semiconductor Detectors ◽  
Position Detection ◽  
High Detection Efficiency

High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

Final Results on the Nature of the Pulse-Height Spectrum from Semiconductor Detectors

1972 ◽  
Vol 19 (3) ◽  
pp. 365-379 ◽  
Author(s):  
N. B. Strokan ◽  
V. K. Yeryomin ◽  
S. A. Lomashevich ◽  
N. I. Tisnek
Keyword(s):  
Pulse Height ◽  
Pulse Height Spectrum ◽  
Semiconductor Detectors

Fundamentals of Semiconductor Detectors for Ionizing Radiation

1993 ◽  
Vol 302 ◽  
Author(s):  
G.F. Knoll ◽  
D.S. Mcgregor
Keyword(s):  
Room Temperature ◽  
Pulse Height ◽  
Charge Trapping ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Signal Pulse ◽  
Semiconductor Detectors ◽  
Modes Of Operation ◽  
Carrier Collection ◽  
Temperature Radiation

ABSTRACTThe modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.

Improved Fabrication Technique for Microstructured Solid-State Neutron Detectors

2009 ◽  
Vol 1164 ◽  
Author(s):  
Steven L Bellinger ◽  
Walter J McNeil ◽  
Douglas Scott McGregor
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Detection Efficiency ◽  
Pulse Height ◽  
Theoretical Models ◽  
Semiconductor Detectors ◽  
Fabrication Technique ◽  
Neutron Detectors ◽  
Efficiency Performance ◽  
Improved Performance

AbstractMicrostructured semiconductor neutron detectors have superior efficiency performance over thin-film coated planar semiconductor detectors. The microstructured detectors have patterns deeply etched into the semiconductor substrates subsequently backfilled with neutron reactive materials. The detectors operate as pn junction diodes. Two variations of the diodes have been fabricated, which either have a rectifying pn junction selectively formed around the etched microstructures or have pn junctions conformally diffused inside the microstructures. The devices with the pn junctions formed in the perforations have lower leakage currents and better signal formation than the devices with selective pn junctions around the etched patterns. Further, pulse height spectra from conformally diffused detectors have the main features predicted by theoretical models, whereas pulse height spectra from the selectively diffused detectors generally do not show these features. The improved performance of the conformal devices is attributed to stronger and more uniform electric fields in the detector active region. Also, system noise, which is directly related to leakage current, has been dramatically reduced as a result of the conformal diffusion fabrication technique. A sinusoidal patterned device with 100 μm deep perforations backfilled with 6LiF was determined to have 11.9 ± 0.078% intrinsic detection efficiency for 0.0253 eV neutrons, as calibrated with thin-film planar semiconductor devices and a 3He proportional counter.

Sign in / Sign up

Export Citation Format

Share Document