Simultaneous Measurements of Optical Transmission and Reflection in Thin Films

1965 ◽  
Vol 36 (9) ◽  
pp. 1331-1333 ◽  
Author(s):  
P. F. Váradi ◽  
J. R. Suffredini
2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940027
Author(s):  
A. Mudryi ◽  
O. Borodavchenko ◽  
V. Zhivulko ◽  
M. Yakushev ◽  
M. Sulimov

The bandgaps of 1.187[Formula: see text]eV in non-irradiated nanostructured thin films of Cu(In,Ga)Se2 (CIGSe) and of 1.182[Formula: see text]eV in those films irradiated with 10[Formula: see text]keV hydrogen ions were determined using optical transmission and reflection spectroscopy at 4.2[Formula: see text]K. The observed reduction in the bandgap is assigned to the formation of secondary antisite defect complexes inducing band tails of the density of states in the valence band.


2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.


2006 ◽  
Vol 957 ◽  
Author(s):  
William E. Fenwick ◽  
Matthew H. Kane ◽  
Zaili Fang ◽  
Tahir Zaidi ◽  
Nola Li ◽  
...  

ABSTRACTTransition metal-doped ZnO bulk crystals and thin films have been investigated to determine the effects of transition metal incorporation on optical, magnetic, and structural properties of ZnO. A modified melt growth technique was used to grow bulk Zn1-xMnxO, Zn1-xCoxO, and Zn1-xFexO. Optical transmission measurements show an apparent shift in absorption edge with increasing transition metal incorporation. Raman spectroscopy also shows increasing lattice disorder with increasing transition metal concentration. ZnO thin films doped with Ni, Co, and Gd were grown by metalorganic chemical vapor deposition (MOCVD). While the Co-doped thin films showed antiferromagnetic behavior, magnetic hysteresis was observed in the Ni-doped and Gd-doped thin films. Structural quality was verified with X-ray diffraction (XRD), and optical properties were investigated using room temperature photoluminescence (PL) and optical transmission measurements. Properties of ZnO:TM bulk crystals and thin films are compared and used to discuss possible origins of ferromagnetism in these materials.


2017 ◽  
Vol 972 ◽  
pp. 1-11 ◽  
Author(s):  
Yan Wang ◽  
Shiming Ding ◽  
Lei Shi ◽  
Mengdan Gong ◽  
Shiwei Xu ◽  
...  

2016 ◽  
Vol 254 (4) ◽  
pp. 1600424 ◽  
Author(s):  
Yurong Su ◽  
Jia Zhang ◽  
Sviatoslav Shokhovets ◽  
Angelika Polity ◽  
Bruno K. Meyer

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