Effect of Heat Treatment on the Optical Properties of Heavily Doped Silicon and Germanium

1964 ◽  
Vol 35 (1) ◽  
pp. 206-211 ◽  
Author(s):  
W. G. Spitzer ◽  
G. W. Gobeli ◽  
F. A. Trumbore
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Silicon And Germanium

Optical Properties of Laser Induced Heavily Doped Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Slaoui ◽  
E. Fogarassy ◽  
P. Siffert ◽  
J.F. Morhange ◽  
M. Balkanski
Keyword(s):  
Solid Solution ◽  
Optical Properties ◽  
Visible Light ◽  
Laser Annealing ◽  
Supersaturated Solid Solution ◽  
Raman Spectrometry ◽  
Silicon Lattice ◽  
Doped Silicon ◽  
Heavily Doped

ABSTRACTThe goal of this paper is to investigate optical properties of heavily doped silicon, performed by laser annealing of implanted layers.The optical properties were investigated by using U.V. and visible light (between 200 and 500 nm)reflectance and Raman spectrometry measurements. The experimental observations have been correlated with the contribution of the supersaturated solid solution of arsenic in the silicon lattice. Furthermore,the absorption coefficent of these layers has been deduced from ellipsometry measurements.

Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eV

1981 ◽  
Vol 46 (21) ◽  
pp. 1414-1417 ◽  
Author(s):  
G. E. Jellison ◽  
F. A. Modine ◽  
C. W. White ◽  
R. F. Wood ◽  
R. T. Young
Keyword(s):  
Optical Properties ◽  
Doped Silicon ◽  
Heavily Doped

Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Koizuka ◽  
M. Inaba ◽  
H. Yamada-Kaneta
Keyword(s):  
Heat Treatment ◽  
Oxygen Concentration ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Precipitation Characteristics ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Absorption Technique

AbstractWe present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

OPTICAL PROPERTIES OF HEAVILY DOPED POLYACETYLENE FILMS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie
Keyword(s):  
Optical Properties ◽  
Heavily Doped
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