Ionic Conductivity, Dielectric Constant, and Optical Properties of Anodic Oxide Films on Two Types of Sputtered Tantalum Films

1966 ◽  
Vol 37 (4) ◽  
pp. 1821-1824 ◽  
Author(s):  
D. Mills ◽  
L. Young ◽  
F. G. R. Zobel
1966 ◽  
Vol 44 (6) ◽  
pp. 641-646 ◽  
Author(s):  
A. C. Harkness ◽  
L. Young

The kinetics of formation of anodic oxide films on different crystal faces of single crystal indium antimonide have been investigated by measurements of charge passed, capacitance, and optical properties. Below a transition or breakdown region of voltage no difference in kinetics was found. Above this voltage a marked difference appeared. The transition voltage was found to depend on both the crystal face and the current density at which the film was formed.


1989 ◽  
Vol 136 (8) ◽  
pp. 2178-2184 ◽  
Author(s):  
J. L. Ord ◽  
D. J. De Smet ◽  
D. J. Beckstead

The thickness of anodic oxide films on chemically polished tantalum was determined from the wavelengths of the minima in the specular reflectivity using a value of the refractive index of 2·20±0·02 at 5900 Ǻ which was measured on detached flakes of the oxide by the immersion method. An auxiliary measure of increments of thickness was required for the analysis of the spectrophotometric measurements. This was provided by the quantity ( Q ∆( 1/ C )) ½ , where Q was the charge which was required to form the increment of thickness, and ∆(1/ C ) was the corresponding increase in the reciprocal capacity. This measure of thickness, like that provided by the colours, is independent of the area. The analysis gives the refractive index between 2800 and 6000 Ǻ, the net phase change in the two reflexions (with certain assumptions), and a value of ϵ/ρ, where ϵ is the effective dielectric constant under the conditions used, and ρ is the density, ρ was determined by weighing specimens in air and water. The value obtained was 7·93 ± 3%, which gives ϵ = 27·6±5%, at 1 kc/s. The effective surface area was then calculated, and was found to be very little different from the apparent area. The field strength during the formation of oxide at 9·55 mA/cm 2 and 25·8° C was found to be 6·61 x 10 6 V/cm and to be constant within experimental error, independent of thickness.


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