Oriented Growth of Semiconductors. IV. Vacuum Deposition of Epitaxial Indium Antimonide

1966 ◽  
Vol 37 (13) ◽  
pp. 4694-4699 ◽  
Author(s):  
H. Holloway ◽  
J. L. Richards ◽  
L. C. Bobb ◽  
J. Perry ◽  
E. Zimmerman
Author(s):  
J. M. Corbett ◽  
J. Fairchild ◽  
F. W. Boswell

Fine-structure in spotty electron diffraction riiig patterns has previously been observed for specimens made up of MgO smoke particles of cubic morphology. This fine-structure was shown to arise from refraction effects in the small cubes (Sturkey & Frevel). We have recently observed a different type of fine structure in patterns from MgO films prepared by vacuum deposition (Fig. 1). This fine-structure consists of sets of regularly spaced fringes occurring at random orientations in the rings. The fringes may be seen in Fig. 2 which shows a segment of the (200) ring magnified 7x from the pattern in Fig. 1. It was considered possible that each set of fringes might arise from two superimposed diffraction’ spots from suitably situated crystallites in the specimen. Experiments have been conducted which clearly demonstrate that the fringes do in fact arise in this way.


2018 ◽  
Vol 1 (1) ◽  
pp. 78-94
Author(s):  
I. A. Obukhov ◽  
◽  
G. G. Gorokh ◽  
A. A. Lozovenko ◽  
E. A. Smirnova ◽  
...  
Keyword(s):  

Author(s):  
В. М. Жихарєв ◽  
В. Ю. Лоя ◽  
А. М. Соломон ◽  
Я. В. Грицище

2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.


1971 ◽  
Vol 42 (6) ◽  
pp. 2487-2493 ◽  
Author(s):  
D. K. Hohnke ◽  
H. Holloway ◽  
E. M. Logothetis ◽  
R. C. Crawley
Keyword(s):  

2021 ◽  
Vol 49 (1) ◽  
pp. 75-106
Author(s):  
Dorothee Bohle ◽  
Aidan Regan

This article argues that the quiet politics of informal business-state interaction explains the political determinants of growth regimes. Building on the business power literature within the study of comparative capitalism, it shows that the noisy politics of elections often leads to changes of government but rarely to fundamental changes in the growth regime. Rather, growth models can be traced to the interactions and interests of dominant corporations within a country and its policymaking elites. The argument is developed through a comparative case study research design, using the case of foreign direct investment–led (FDI-led) growth in Ireland and Hungary. FDI-led growth regimes are a universe of cases that rely on state-led industrial and enterprise policies targeting the capital investment of foreign-owned multinational firms. Despite periods of noisy electoral politics challenging basic tenets of the FDI-led growth model in both Hungary and Ireland, the continuity of FDI-oriented growth is traced to the corporate politics of business-state elite deals.


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