scholarly journals The Analysis of Multicomponent Mixtures of Hydrocarbons in the Liquid Phase by Means of Infra‐Red Absorption Spectroscopy

1946 ◽  
Vol 17 (3) ◽  
pp. 150-161 ◽  
Author(s):  
D. L. Fry ◽  
R. E. Nusbaum ◽  
H. M. Randall
Keyword(s):  
Liquid Phase ◽  
Absorption Spectroscopy ◽  
Multicomponent Mixtures ◽  
Infra Red

A Spectrophotometric Method for the Analysis of Multicomponent Mixtures and Its Infra‐Red Application

1943 ◽  
Vol 14 (8) ◽  
pp. 418-428 ◽  
Author(s):  
R. Robert Brattain ◽  
R. S. Rasmussen ◽  
A. M. Cravath
Keyword(s):  
Spectrophotometric Method ◽  
Multicomponent Mixtures ◽  
Infra Red

High pressurein situx-ray absorption spectroscopy cell for studying simultaneously the liquid phase and the solid/liquid interface

2005 ◽  
Vol 76 (5) ◽  
pp. 054104 ◽  
Author(s):  
Jan-Dierk Grunwaldt ◽  
Michael Ramin ◽  
Markus Rohr ◽  
Alexej Michailovski ◽  
Greta R. Patzke ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Absorption Spectroscopy ◽  
Liquid Interface ◽  
Solid Liquid Interface ◽  
Solid Liquid

Growth of High Quality Lwir Films by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
Electrical Performance ◽  
Cdznte Substrate ◽  
Long Wavelength ◽  
Indium Doping ◽  
Dislocation Densities ◽  
Infra Red

ABSTRACTGrowth of long wavelength infra-red mercury cadmium telluride films by liquid phase epitaxy has usually yielded films of inferior electrical properties as evidenced by Hall mobilities lower than theoretical values by factors of 5 or more at 77°K. In addition the Hall behavior over the entire temperature range did not follow classical patterns. A systematic series of investigations was conducted to improve the electrical performance of these films by four methods: i) growth of HgCdZnTe films, where a portion of the cadmium was replaced by zinc, ii) growth at temperatures > 550°C, iii) growth at a slow rate on a CdZnTe substrate following ‘Cleaning’ in the melt of the substrate surface and iv) doping the film by controlled levels of indium. The first method did not lead to any improvements in the Hall behavior. In addition, the films grown displayed varying dislocation densities. The second method led to a small but definite increase in the yield of non-anomalous or classical films (5%). The third method yielded films with classical or non-anomalous Hall behavior about 20% of the time. The last method consistently led to films with classical Hall behavior. This was accomplished with indium doping levels at 1.5× 1014/cm3. Preliminary data indicate that it will be possible to go to still lower doping levels while maintaining classical Hall behavior. The improvement in electrical properties of these epifilms can be attributed to the reduction or elimination of type inhomogeneities known to degrade Hall mobilities in films grown by liquid phase epitaxy.

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