The Solubility Diagram and the Temperature‐Composition Diagram at Atmospheric Pressure of the Liquid System Ozone‐Oxygen

1953 ◽  
Vol 21 (9) ◽  
pp. 1610-1611 ◽  
Author(s):  
Hans Joachim Schumacher
Keyword(s):  
Atmospheric Pressure ◽  
Solubility Diagram ◽  
Liquid System ◽  
Composition Diagram

scholarly journals Synthesis of Nanosilver in Plasma-Liquid Microdischarge System

2017 ◽  
Vol 4 (2) ◽  
pp. 133-136 ◽  
Author(s):  
V. Chernyak ◽  
D. Hamazin ◽  
O. Kolomiiets ◽  
O. Prysiazhna ◽  
A. Goriachko ◽  
...  
Keyword(s):  
Aqueous Solutions ◽  
Atmospheric Pressure ◽  
Emission Spectroscopy ◽  
Plasma Channel ◽  
Video Recording ◽  
Liquid System ◽  
Spectroscopy Technique ◽  
Working Liquid

This paper presents the results of investigation of the plasma-liquid system with the secondary discharge supported by atmospheric pressure microdischarge in the vortex Ar flow. The plasma treated fluids were aqueous solutions of AgNO<sub>3</sub>. The microplasma discharge was powered by a DC supply. The plasma channel behaviour was characterized by photo/video recording, also plasma was studied using emission spectroscopy technique. The working liquid and firm products created after the treatment were studied also.

scholarly journals Change of refractive indices in ternary mixtures containing chlorobenzene + n-hexane + (n-heptane or n-octane) at 298.15 K

2004 ◽  
Vol 69 (6) ◽  
pp. 461-475 ◽  
Author(s):  
A. Touriño ◽  
M. Hervello ◽  
V. Moreno ◽  
G. Marino ◽  
M. Iglesias
Keyword(s):  
Atmospheric Pressure ◽  
Composition Dependence ◽  
Equations Of State ◽  
Ternary Mixtures ◽  
Fluid Mixing ◽  
Refractive Indices ◽  
Polynomial Equations ◽  
Composition Diagram ◽  
Derived Properties ◽  
Semi Empirical

The refractive indices of ternary mixtures of chlorobenzene + n-hexane (n-heptane or n-octane) have been measured at 298.15 K and at atmospheric pressure over the whole composition diagram. Parameters of polynomial equations which represent the composition dependence of physical and derived properties are gathered. The experimental refractive indices and the ternary derived properties are compared with the data obtained using several predictive semi-empirical models. The use of the Soave?Redlich?Kwong (SRK) and the Peng?Robinson (PR) cubic equations of state with the Van der Waals one-fluid mixing rule, which incorporate different combining rules to predict refractive indices on mixing, are tested against the measured results, good agrement being obtained.

CALCULATION OF PHASE EQUILIBRIUM OF SYSTEM VAPOR–LIQUID IN TERNARY MIXTURES ISOAMYLOL–ETHANOL–WATER AND ISOBUTANOL–ETHANOL–WATER AT HIGH CONCENTRATIONS OF HIGHER ALCOHOLS

2021 ◽  
Author(s):  
Т.Г. КОРОТКОВА ◽  
С.Ю. КСАНДОПУЛО ◽  
Т.А. УСТЮЖАНИНОВА ◽  
Н.В. СОЛОННИКОВА ◽  
М.О. КОЗЛОВА
Keyword(s):  
Phase Equilibrium ◽  
Atmospheric Pressure ◽  
Calculated Data ◽  
Liquid System ◽  
Ternary Mixtures ◽  
Binary Interaction ◽  
Higher Alcohols ◽  
Antoine Equation ◽  
High Concentrations ◽  
Vapor Liquid

Проведено сравнение экспериментальных и расчетных данных при описании фазового равновесия по методам группового вклада UNIQUAC и NRTL для трехкомпонентных смесей изоамилол–этанол–вода и изобутанол–этанол–вода системы пар–жидкость при атмосферном давлении и высоких концентрациях высших спиртов (10–20% мас.). При расчете упругости паров чистых компонентов использовано уравнение Антуана. Приведены константы Антуана и парные энергетические параметры бинарного взаимодействия исследованных компонентов методов UNIQUAC и NRTL. Оба метода хорошо описывают равновесие в этих системах. The experimental and calculated data are compared in the description of phase equilibrium by the methods of the group contribution of UNIQUAC and NRTL for three-component isoamylol-ethanol-water and isobutanol-ethanol-water mixtures of the vapor-liquid system at atmospheric pressure and high concentrations of higher alcohols (10-20% by weight). The Antoine equation was used for calculation of the elasticity of vapors of pure components. The Antoine constants and the pairwise energy parameters of the binary interaction of the investigated components of the UNIQUAC and NRTL methods are given. Both methods well describe balance in these systems.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Microstructure and reactivity of small metal particles: The role of Ce additives

1992 ◽  
Vol 50 (1) ◽  
pp. 318-319
Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu
Keyword(s):  
Atmospheric Pressure ◽  
Noble Metals ◽  
Mixed Oxides ◽  
Catalytic Properties ◽  
Chemical Shifts ◽  
Catalytic Converter ◽  
Structural Evolution ◽  
Single Particles ◽  
Small Metal Particles

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.

Modeling of mass-transportation of tris-(acetylacetonato)chromium(III) at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-251-Pr8-258 ◽  
Author(s):  
N. E. Fedotova ◽  
A. N. Mikheev ◽  
N. V. Gelfond ◽  
I. K. Igumenov ◽  
N. B. Morozova ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Mass Transportation

Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-221-Pr8-228
Author(s):  
E. de Paola ◽  
P. Duverneuil ◽  
A. Langlais ◽  
M. Nguyen
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Barrel Reactor
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