Magnetic compression and electron cyclotron heating of a low temperature, lithium plasma

1974 ◽  
Vol 17 (3) ◽  
pp. 559
Author(s):  
J. Kim
Keyword(s):  
Low Temperature ◽  
Electron Cyclotron ◽  
Electron Cyclotron Heating ◽  
Magnetic Compression ◽  
Lithium Plasma

Electron cyclotron heating in the compact ignition tokamak

1987 ◽  
Author(s):  
E. Mazzucato ◽  
I. Fidone ◽  
R. L. Meyer
Keyword(s):  
Electron Cyclotron ◽  
Electron Cyclotron Heating

Transition phenomena observed during edge electron cyclotron heating in the Heliotron-E helical device

1995 ◽  
Vol 26 (1-4) ◽  
pp. 159-165 ◽  
Author(s):  
K. Nagasaki ◽  
H. Zushi ◽  
T. Mizuuchi ◽  
K. Kondo ◽  
F. Sano ◽  
...  
Keyword(s):  
Electron Cyclotron ◽  
Electron Cyclotron Heating

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

Suppression of Trapped Energetic Ions Driven Resistive Interchange Modes with Electron Cyclotron Heating in a Helical Plasma

2017 ◽  
Vol 118 (12) ◽  
Author(s):  
X. D. Du ◽  
K. Toi ◽  
S. Ohdachi ◽  
K. Y. Watanabe ◽  
H. Takahashi ◽  
...  
Keyword(s):  
Electron Cyclotron ◽  
Electron Cyclotron Heating ◽  
Energetic Ions

Progress in the ITER electron cyclotron heating and current drive system design

2015 ◽  
Vol 96-97 ◽  
pp. 547-552 ◽  
Author(s):  
Toshimichi Omori ◽  
Ferran Albajar ◽  
Tullio Bonicelli ◽  
Giuseppe Carannante ◽  
Mario Cavinato ◽  
...  
Keyword(s):  
System Design ◽  
Electron Cyclotron ◽  
Current Drive ◽  
Drive System ◽  
Electron Cyclotron Heating
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