Change of electrical resistivity of metal films bombarded with helium ions of low energy

1974 ◽  
Vol 45 (6) ◽  
pp. 2394-2395
Author(s):  
A. Nomura ◽  
M. Kanayama ◽  
S. Kiyono
Keyword(s):  
Electrical Resistivity ◽  
Metal Films ◽  
Low Energy ◽  
Helium Ions

Angular, energy and charge distribution in the scattering of low-energy helium ions by an amorphous silicon surface

1998 ◽  
Vol 10 (4) ◽  
pp. 741-752 ◽  
Author(s):  
B Arezki ◽  
Y Boudouma ◽  
P Benoit-Cattin ◽  
A C Chami ◽  
C Benazeth ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Charge Distribution ◽  
Silicon Surface ◽  
Low Energy ◽  
Helium Ions ◽  
Angular Energy

The Influence of Charge Effects on the Growth and Electrical Resistivity of Thin Metal Films

1967 ◽  
Vol 38 (4) ◽  
pp. 1986-1987 ◽  
Author(s):  
D. I. Kennedy ◽  
R. E. Hayes ◽  
R. W. Alsford
Keyword(s):  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Charge Effects

scholarly journals A Case Study of Transversely Heated Low‐Energy Helium Ions by EMIC Waves in the Plasmasphere

2021 ◽  
Vol 126 (2) ◽  
Author(s):  
Khan‐Hyuk Kim ◽  
Hyuck‐Jin Kwon ◽  
Junhyun Lee ◽  
Ho Jin ◽  
Jungjoon Seough
Keyword(s):  
Low Energy ◽  
Helium Ions ◽  
Emic Waves

Electron and Ion Beam-Enhanced Adhesion

1983 ◽  
Vol 25 ◽  
Author(s):  
I.V. Mitchell ◽  
J.S. Williams ◽  
D.K. Sood ◽  
K.T. Short ◽  
S. Johnson ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Metal Films ◽  
Recent Model ◽  
Helium Ions ◽  
Collisional Process

ABSTRACTHelium ions of 2 MeV energy and electrons of 5 to 30 keV energy have been used to irradiate a variety of thin (10–330 nm) metal films after deposition on semiconductor and insulator substrates. Dose thresholds for increased adhesion were found following irradiation with either type of particle. It is argued that the stronger bonding arises from an electronic, rather than a collisional, process. Representative results are presented and discussed within the framework of a recent model for heavy ion-induced effects.

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