Formation of silicon oxide over gold layers on silicon substrates

1972 ◽  
Vol 43 (9) ◽  
pp. 3643-3649 ◽  
Author(s):  
Akio Hiraki ◽  
Eriabu Lugujjo ◽  
J. W. Mayer
Keyword(s):  
Silicon Oxide ◽  
Silicon Substrates

Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

1983 ◽  
Vol 54 (4) ◽  
pp. 1849-1854 ◽  
Author(s):  
J. E. E. Baglin ◽  
F. M. d’Heurle ◽  
C. S. Petersson
Keyword(s):  
Silicon Oxide ◽  
Silicon Substrates ◽  
Metal Silicide ◽  
Interface Effects

Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum

2013 ◽  
Vol 114 (11) ◽  
pp. 114104 ◽  
Author(s):  
Y. Enta ◽  
T. Nagai ◽  
T. Yoshida ◽  
N. Ujiie ◽  
H. Nakazawa
Keyword(s):  
Silicon Oxide ◽  
Decomposition Kinetics ◽  
Silicon Substrates ◽  
Oxide Layers ◽  
Kinetics Of

Activation energy of thermal desorption of silicon oxide layers on silicon substrates

2017 ◽  
Vol 656 ◽  
pp. 96-100 ◽  
Author(s):  
Yoshiharu Enta ◽  
Shodai Osanai ◽  
Takahito Ogasawara
Keyword(s):  
Activation Energy ◽  
Thermal Desorption ◽  
Silicon Oxide ◽  
Silicon Substrates ◽  
Oxide Layers

Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation

2012 ◽  
Vol 195 ◽  
pp. 261-264 ◽  
Author(s):  
Koichiro Saga
Keyword(s):  
Ion Implantation ◽  
Silicon Oxide ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Diffusion Behavior ◽  
Metal Impurities ◽  
Surface Metal ◽  
Recombination Centers ◽  
Detrimental Impact ◽  
Different Thickness

Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and result in junction leakage. Surface metal impurities penetrate silicon by the colliding with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. The diffusion behavior of metal impurities in silicon is well-known [. While metal impurities often penetrate silicon through the silicon oxide in ULSI processing, little work has been reported on the diffusion behavior of metal impurities penetrating silicon oxide. We demonstrated the diffusion behavior of metal impurities penetrating silicon substrates with different thickness of silicon oxide by the collision with dopant during ion implantation.

Ultraviolet Photoluminescence from 4H–SiC Nanocrystalline Films Deposited on Silicon Substrate

2002 ◽  
Vol 17 (3) ◽  
pp. 570-574 ◽  
Author(s):  
Zhengping Fu ◽  
Beifang Yan ◽  
Ruchuan Liu ◽  
Yaozhong Ruan
Keyword(s):  
Silicon Oxide ◽  
Luminescence Center ◽  
Silicon Substrates ◽  
Nanocrystalline Films ◽  
Sic Nanoparticles ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films ◽  
Mean Size ◽  
The Mean ◽  
Size Of Particles

Preferred-orientated 4H–SiC nanocrystalline films on silicon substrates were successfully prepared by the pyrolysis of the polyimide Langmuir–Blodgett films containing nanometer-sized amorphous silicon nitride powders. Fourier-transform infrared spectra revealed 4H–SiC nanoparticles with interfacial silicon oxide. Ultraviolet photoluminescence with energies above the band gap of bulk 4H–SiC was observed from the films in which the mean size of 4H–SiC particles was 10 nm, while no photoluminescence was observed from the films in which the mean size of particles was 17 nm. A quantum confinement/luminescence center model is suggested to explain the origin of the ultraviolet luminescence.

Effect of Oxidizer on Chemical Vapor Deposited Hafnium Oxide-Based Nanostructures and the Engineering of their Interfaces with Si(100)

2007 ◽  
Vol 996 ◽  
Author(s):  
Manish K. Singh ◽  
Rajesh Katamreddy ◽  
Christos G. Takoudis
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxygen Mixture ◽  
Silicon Substrates ◽  
Cold Wall ◽  
Mocvd Reactor ◽  
Layer Deposition

AbstractThin films of hafnium oxide were deposited on silicon substrates using tetrakis-diethylamino hafnium as precursor. Two different oxidizers: (a) ozone/oxygen mixture, and (b) dry oxygen were used for comparative study of the effect of different oxidizers on the deposited films. The deposition using dry oxygen was carried out in a cold-wall rapid thermal processing metalorganic chemical vapor deposition (MOCVD) reactor, whereas ozone/oxygen mixture was used in a cold-wall atomic layer deposition (ALD) reactor. Annealing studies were carried out at 600 and 800°C in high-purity argon at atmospheric pressure. X-ray photoelectron spectroscopy (XPS) analyses of as-deposited and annealed films were performed to study the HfO2/Si interface. The films deposited using these two different oxidizers appeared to be of comparable quality. Silicon oxide formation at the interface occurred after annealing at 600°C and it increased upon further annealing at 800 °C.

Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing

2014 ◽  
Vol 219 ◽  
pp. 265-267
Author(s):  
Koichiro Saga ◽  
Shunsuke Kobayashi ◽  
Koji Sueoka
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Silicon Oxide ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Diffusion Behavior ◽  
Metal Impurities ◽  
Silicon Nitride Films ◽  
Surface Metal ◽  
Detrimental Impact

Metallic contamination on silicon surfaces has a detrimental impact on the performance and yield of ULSI devices. Surface metal impurities degrade the gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and this results in junction leakage. The diffusion behavior of these metal impurities in silicon is well-known [1]. On the other hand, these metal impurities often penetrate the silicon through the silicon oxide or silicon nitride films in ULSI processing. The surface metal impurities penetrate the silicon by colliding with the dopant during ion implantation and are also diffused in silicon by subsequent annealing [2]. While the diffusion behavior of the metal impurities penetrating silicon substrates through the silicon oxide films has been reported [3], little work has been reported on the diffusion behavior of the metal impurities penetrating silicon nitride films. We demonstrated the diffusion behavior of the metal impurities penetrating silicon substrates through a CVD SiN film due to the collision with dopant during ion implantation.

Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride

2002 ◽  
Vol 751 ◽  
Author(s):  
Anindya Dasgupta ◽  
Abhijit Roy Chowdhuri ◽  
Christos G. Takoudis
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Aluminum Oxide ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Aluminum Silicate ◽  
Excess Oxygen ◽  
Silicon Substrates ◽  
Interfacial Layers ◽  
Film Substrate

ABSTRACTThin films of aluminum oxide were deposited on silicon nitride thin films using trimethylaluminum and oxygen at 0.5 Torr and 300 °C. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic (XPS) analyses of these films showed no aluminum silicate phase at the film-substrate interface. The O/Al ratio in the deposited film was found to be higher than that in stoichiometric Al2O3 indicating the presence of excess oxygen. FTIR spectroscopy and XPS of the annealed samples did not show any formation of silicon oxide, oxynitride or silicate at the aluminum oxide/silicon nitride interface. In contrast to aluminum oxide on clean silicon substrates, using ultrathin silicon nitride as a barrier layer could prevent excess oxygen migration towards the Si substrate and formation of any interfacial layers.

scholarly journals Boron-Implanted Silicon Substrates for Physical Adsorption of DNA Origami

2018 ◽  
Vol 19 (9) ◽  
pp. 2513 ◽  
Author(s):  
Sadao Takabayashi ◽  
Shohei Kotani ◽  
Juan Flores-Estrada ◽  
Elijah Spears ◽  
Jennifer E. Padilla ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Physical Adsorption ◽  
High Surface ◽  
Dna Origami ◽  
Silicon Substrates ◽  
Dna Nanostructures ◽  
Solution Ph ◽  
Chemical Functionalization ◽  
Industry Standard ◽  
Controlled Adsorption

DNA nanostructures routinely self-assemble with sub-10 nm feature sizes. This capability has created industry interest in using DNA as a lithographic mask, yet with few exceptions, solution-based deposition of DNA nanostructures has remained primarily academic to date. En route to controlled adsorption of DNA patterns onto manufactured substrates, deposition and placement of DNA origami has been demonstrated on chemically functionalized silicon substrates. While compelling, chemical functionalization adds fabrication complexity that limits mask efficiency and hence industry adoption. As an alternative, we developed an ion implantation process that tailors the surface potential of silicon substrates to facilitate adsorption of DNA nanostructures without the need for chemical functionalization. Industry standard 300 mm silicon wafers were processed, and we showed controlled adsorption of DNA origami onto boron-implanted silicon patterns; selective to a surrounding silicon oxide matrix. The hydrophilic substrate achieves very high surface selectivity by exploiting pH-dependent protonation of silanol-groups on silicon dioxide (SiO2), across a range of solution pH values and magnesium chloride (MgCl2) buffer concentrations.

Investigation of the Crystalline Orientations and Substrates Dependence on Mechanical Properties of PZT Thin Films by Nanoindentation

2008 ◽  
Vol 1129 ◽  
Author(s):  
Dan Liu ◽  
Sang H Yoon ◽  
Bo Zhou ◽  
Barton C Prorok ◽  
Dong-Joo Kim
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Chelating Agent ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Different Types ◽  
Continuous Stiffness Measurement ◽  
Combined Parameters

AbstractIn this paper, we investigated the effects of the substrates and crystalline orientations on the mechanical properties of Pb(Zr0.52Ti0.48)O3 thin films. The PZT thin films were deposited by sol-gel method on platinized silicon substrates with different types of layer materials such as silicon nitride and silicon oxide. The crystalline orientations of PZT thin films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was employed to characterize the mechanical properties of those PZT thin films. It was observed that (001/100)-oriented films show a higher Young’s modulus compared to films with mixed orientations of (110) and (111), indicating a clear dependence on film orientation. The influence of substrates on the mechanical properties of PZT thin films was also characterized. Finally, no significant influence of the film thickness was found on the mechanical properties of films thicker than 200 nm.

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