Hot‐Electron Faraday Effect in Nonparabolic Semiconductors at Low Temperatures

1971 ◽  
Vol 42 (6) ◽  
pp. 2400-2406 ◽  
Author(s):  
Mahendra S. Sodha ◽  
Satish K. Sharma ◽  
Prabhat K. Dubey
1988 ◽  
Vol 64 (8) ◽  
pp. 4041-4045 ◽  
Author(s):  
Partha Pratim Basu ◽  
C. K. Sarkar ◽  
D. Chattopadhyay

1970 ◽  
Vol 40 (2) ◽  
pp. 701-706 ◽  
Author(s):  
D. Chattopadhyay ◽  
B. R. Nag

2016 ◽  
Vol 1141 ◽  
pp. 34-38 ◽  
Author(s):  
Ankur Pandya ◽  
Satyam Shinde ◽  
Prafulla K. Jha

The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.


1985 ◽  
Vol 6 (9) ◽  
pp. 450-452 ◽  
Author(s):  
J.J. Tzou ◽  
C.C. Yao ◽  
R. Cheung ◽  
H. Chan

1997 ◽  
Vol 39 (10) ◽  
pp. 1621-1622 ◽  
Author(s):  
B. Yu. Sokolov

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