Residual Information in Magnetic Memory Devices

1971 ◽  
Vol 42 (4) ◽  
pp. 1755-1762 ◽  
Author(s):  
C. F. Taylor ◽  
J. D. Blades ◽  
F. G. Hewitt
Keyword(s):  
Magnetic Memory ◽  
Memory Devices

scholarly journals TEM Study of Current-Induced Domain Wall Motion in Cylindrical Nanowires: Towards 3D Magnetic Memory Devices

2018 ◽  
Vol 24 (S1) ◽  
pp. 944-945 ◽  
Author(s):  
Sergei Lopatin ◽  
Yurii P. Ivanov ◽  
Jurgen Kosel ◽  
Andrey Chuvilin
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Magnetic Memory ◽  
Memory Devices

Emerging Three-Terminal Magnetic Memory Devices

2016 ◽  
Vol 104 (10) ◽  
pp. 1831-1843 ◽  
Author(s):  
Seo-Won Lee ◽  
Kyung-Jin Lee
Keyword(s):  
Magnetic Memory ◽  
Memory Devices

Concomitant Magnetic Memory Effect in CrO2–Cr2O3 Core–Shell Nanorods: Implications for Thermal Memory Devices

2019 ◽  
Vol 2 (12) ◽  
pp. 8027-8042
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Tai-Yue Li ◽  
Jen-Chih Peng ◽  
Chin-Wei Wang ◽  
Ting Shan Chan ◽  
...  
Keyword(s):  
Memory Effect ◽  
Core Shell ◽  
Magnetic Memory ◽  
Memory Devices ◽  
Thermal Memory

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Magnetic Memory

2009 ◽  
Author(s):  
Denny D. Tang ◽  
Yuan-Jen Lee
Keyword(s):  
Magnetic Memory
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