Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations

1968 ◽  
Vol 39 (8) ◽  
pp. 3897-3904 ◽  
Author(s):  
H. W. Thim
Keyword(s):  
Computer Study ◽  
Bulk Gaas ◽  
One Dimensional ◽  
Gaas Devices

Tin-Gold Contacts for Planar Bulk GaAs Devices

1968 ◽  
Vol 24 (1) ◽  
pp. 110-114 ◽  
Author(s):  
Toshiya Hayashi ◽  
Michiyuki Uenohara ◽  
Iwao Takao
Keyword(s):  
Bulk Gaas ◽  
Gaas Devices ◽  
Gold Contacts

Aging effects on bulk GaAs devices

1968 ◽  
Vol 56 (2) ◽  
pp. 236-237 ◽  
Author(s):  
M.N. Al-Moufti ◽  
S.V. Jaskolski ◽  
T.K. Ishii
Keyword(s):  
Aging Effects ◽  
Bulk Gaas ◽  
Gaas Devices

Prospects for GaAs-on-Si LSI Circuits

1987 ◽  
Vol 91 ◽  
Author(s):  
H. Shichijo ◽  
L.T. Tran ◽  
R.J. Matyi ◽  
J.W. Lee
Keyword(s):  
Threshold Voltage ◽  
Large Scale ◽  
Recent Progress ◽  
Ring Oscillators ◽  
Standard Process ◽  
Bulk Gaas ◽  
Gaas On Si ◽  
Recent Success ◽  
Bipolar Devices ◽  
Gaas Devices

ABSTRACTThis paper will review some of the recent progress in GaAs-on-Si devices and circuits, and discuss the issues involved in realizing large scale ICs in GaAs-on-Si wafers. With a recent success in fabricating 1 Kbit static RAMs in GaAs-on-Si wafers, it has become apparent that this material is indeed acceptable for LSI complexity circuits. GaAs MESFETs fabricated using a standard process show an excellent threshold voltage uniformity which is comparable to that for bulk GaAs devices. GaAs bipolar devices on GaAs-on-Si have realized a gain of 25 which is the highest reported for bipolar devices in GaAs-on-Si material. Bipolar ring oscillators and 256-bit ROMs consisting of more than 100 gates have also been realized. In spite of these successes, however, there are numerous issues that need to be solved before this material becomes practical.

The Effect of Thermal Contact Resistance on Heat Transfer Between Periodically Contacting Surfaces

1973 ◽  
Vol 95 (3) ◽  
pp. 411-412 ◽  
Author(s):  
J. R. Howard ◽  
A. E. Sutton
Keyword(s):  
Heat Transfer ◽  
Heat Conduction ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Analog Computer ◽  
Contact Interface ◽  
Computer Study ◽  
One Dimensional

An analog-computer study is made of one-dimensional heat conduction through two bars whose axes are in line and whose adjacent ends make and break contact periodically. The work extends a previous study to take account of imperfect thermal contact at the contact interface. The effect of frequency and duration of contact are also discussed.

High power RF generation with optically activated bulk GaAs devices

2003 ◽  
Author(s):  
A. Kim ◽  
M. Weiner ◽  
R. Youmans ◽  
P. Herczfeld ◽  
A. Rosen
Keyword(s):  
High Power ◽  
Bulk Gaas ◽  
Gaas Devices

Subnanosecond risetime high power pulse generation using photoconductive bulk GaAs devices

1990 ◽  
Author(s):  
A. H. Kim ◽  
Maurice Weiner ◽  
Robert J. Youmans ◽  
Robert J. Zeto
Keyword(s):  
High Power ◽  
Pulse Generation ◽  
Bulk Gaas ◽  
Power Pulse ◽  
Gaas Devices ◽  
High Power Pulse

A one-dimensional self-gravitating stellar gas

1966 ◽  
Vol 25 ◽  
pp. 46-48 ◽  
Author(s):  
M. Lecar
Keyword(s):  
Gravitational Field ◽  
Phase Space ◽  
Motion Picture ◽  
Space Distribution ◽  
Two Dimensional ◽  
One Dimensional ◽  
Phase Space Distribution ◽  
Dimensional Phase Space ◽  
The Mean

“Dynamical mixing”, i.e. relaxation of a stellar phase space distribution through interaction with the mean gravitational field, is numerically investigated for a one-dimensional self-gravitating stellar gas. Qualitative results are presented in the form of a motion picture of the flow of phase points (representing homogeneous slabs of stars) in two-dimensional phase space.

Electron-Mirror Microscopic Aspects of Ferroelectric Domains of BaTiO3 And Ca2Sr (C2H5CO2)6

1970 ◽  
Vol 28 ◽  
pp. 478-479
Author(s):  
Teruo Someya ◽  
Jinzo Kobayashi
Keyword(s):  
Surface Layer ◽  
Electric Fields ◽  
Quantitative Study ◽  
Recent Progress ◽  
Ferroelectric Domain ◽  
Resolving Power ◽  
Surface Pattern ◽  
Crystal Surfaces ◽  
One Dimensional ◽  
Ferroelectric Domains

Recent progress in the electron-mirror microscopy (EMM), e.g., an improvement of its resolving power together with an increase of the magnification makes it useful for investigating the ferroelectric domain physics. English has recently observed the domain texture in the surface layer of BaTiO3. The present authors ) have developed a theory by which one can evaluate small one-dimensional electric fields and/or topographic step heights in the crystal surfaces from their EMM pictures. This theory was applied to a quantitative study of the surface pattern of BaTiO3).

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