Improved Infrared‐Response Technique for Determining Impurity and Defect Levels in Semiconductors

1972 ◽  
Vol 20 (3) ◽  
pp. 120-122 ◽  
Author(s):  
A. H. Sher ◽  
W. J. Keery
Keyword(s):  
Impurity And Defect Levels ◽  
Defect Levels

Impurity and defect levels in beryllium‐doped GaAs grown by molecular beam epitaxy

1982 ◽  
Vol 53 (9) ◽  
pp. 6391-6398 ◽  
Author(s):  
P. K. Bhattacharya ◽  
H.‐J. Bühlmann ◽  
M. Ilegems ◽  
J. L. Staehli
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Impurity And Defect Levels ◽  
Defect Levels

Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals

2020 ◽  
Vol 35 (22) ◽  
pp. 3041-3047
Author(s):  
Lingyan Xu ◽  
Yan Zhou ◽  
Xu Fu ◽  
Lu Liang ◽  
Wanqi Jie
Keyword(s):  
Hydrogen Passivation ◽  
Defect Levels

Abstract

scholarly journals Field Effect on Crystal Phase of Silicon in Si/CeO2/SiO2Structure

2008 ◽  
Vol 2008 ◽  
pp. 1-4
Author(s):  
Dmitry E. Milovzorov
Keyword(s):  
Electronic Structure ◽  
Spatial Distribution ◽  
Band Gap ◽  
Buffer Layer ◽  
Field Effect ◽  
Cerium Dioxide ◽  
Silicon Film ◽  
Crystal Phase ◽  
Great Role ◽  
Defect Levels

The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.

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