An optical characterization of defect levels induced by MBE growth of GaAs

1983 ◽  
Vol 1 (3) ◽  
pp. 811 ◽  
Author(s):  
J. P. Contour
Keyword(s):  
Optical Characterization ◽  
Mbe Growth ◽  
Defect Levels

Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

1993 ◽  
Vol 80-81 ◽  
pp. 632-635
Author(s):  
Shin'ichi Yamamura ◽  
Tadamasa Kimura ◽  
Shigemi Yugo ◽  
Riichiro Saito ◽  
Michio Murata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Characterization ◽  
Defect Levels

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

MBE growth and characterization of ZnS1−xTex

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 66-69 ◽  
Author(s):  
K Takahashi
Keyword(s):  
Mbe Growth

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization

Optical Characterization of Monodispersed Aaqueous Cu2+-Doped CdS Nanoparticles Prepared Under Microwave Irradiation Conditions

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Optical Characterization ◽  
Cds Nanoparticles

Application of Kubelka-Munk model on the optical characterization of translucent dental zirconia

2021 ◽  
Vol 258 ◽  
pp. 123994
Author(s):  
Luciana M. Schabbach ◽  
Bruno C. dos Santos ◽  
Letícia S. De Bortoli ◽  
Márcio Celso Fredel ◽  
Bruno Henriques
Keyword(s):  
Optical Characterization

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition

Optical characterization of laterally and vertically structured oxides and semiconductors

2014 ◽  
Author(s):  
P. Petrik ◽  
N. Kumar ◽  
E. Agocs ◽  
B. Fodor ◽  
S. F. Pereira ◽  
...  
Keyword(s):  
Optical Characterization
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