RAPID REVERSIBLE LIGHT‐INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS

1971 ◽  
Vol 18 (6) ◽  
pp. 254-257 ◽  
Author(s):  
J. Feinleib ◽  
J. deNeufville ◽  
S. C. Moss ◽  
S. R. Ovshinsky
Keyword(s):  
Amorphous Semiconductors ◽  
Induced Crystallization

Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors

1991 ◽  
pp. 34-37
Author(s):  
J. Feinleib ◽  
J. deNeufville ◽  
S. C. Moss ◽  
S. R. Ovshinsky
Keyword(s):  
Amorphous Semiconductors ◽  
Induced Crystallization

Fundamentals of Metal-induced Crystallization of Amorphous Semiconductors

2009 ◽  
Vol 11 (3) ◽  
pp. 131-135 ◽  
Author(s):  
Zumin Wang ◽  
Lars P. H. Jeurgens ◽  
Jiang Y. Wang ◽  
Eric J. Mittemeijer
Keyword(s):  
Amorphous Semiconductors ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Al/ZnO/a-SiGe:H: A System Protected by the ZnO Buffer from Metal-Induced Crystallization

1997 ◽  
Vol 467 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
R. Weil ◽  
C. Beneking ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Barrier Properties ◽  
Amorphous Semiconductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Amorphous System ◽  
Al Metallization ◽  
Secondary Ion ◽  
Induced Crystallization

ABSTRACTMetal-Induced-Crystallization (MIC) by the contact of amorphous semiconductors with metals is one of the degradation factors in solar cells. This study has been made on the barrier properties of a ZnO layer between undoped a-SiGe:H and Al metallization films in the structure (001)Si/SiO2/a-SiGe:H/ZnO/Al. Plasma assisted CVD deposition was used to produce a-Si1.xGex:H (x=0 to 1) undoped films over thermally oxidized Si-wafers. There were covered with 500Å and 1000Å thick transparent conductive layers of ZnO. Al and then 1000Å thick films of Al. A set of Al-implanted a-Si, a-Ge, and a-Sio.5Geo.5 films on Si/SiO2 substrates was also prepared to study MIC in an amorphous system with dispersed Al. The structures were annealed in vacuum in the temperature range of 200°C to 400°C for lh. X-ray diffraction studies demonstrated the a-SiGe:H stability against crystallization under ZnO protection up to 400°C. Secondary Ion Mass Spectroscopy didn't reveal any noticeable redistribution of Al inside Al-implanted a-Si:H and a-Si0.5Ge0.5:H samples after annealing at 400°C for lh, but strong Al diffusion was seen in the a-Ge:H layer. Nevertheless, no MIC was observed in any of the Al-implanted a-materials.

COMPUTATION OF ε2-SPECTRA OF AMORPHOUS SEMICONDUCTORS

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-157-C3-165 ◽  
Author(s):  
B. KRAMER ◽  
K. MASCHKE ◽  
P. THOMAS
Keyword(s):  
Amorphous Semiconductors

LASER-INDUCED METASTABLE STATES IN AMORPHOUS SEMICONDUCTORS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-395-C4-398 ◽  
Author(s):  
M. Wautelet ◽  
R. Andrew ◽  
M. Failly-Lovato ◽  
L. D. Laude
Keyword(s):  
Amorphous Semiconductors ◽  
Metastable States

REVIEW OF GROUP-V AMORPHOUS SEMICONDUCTORS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-855-C4-864 ◽  
Author(s):  
E. A. Davis
Keyword(s):  
Amorphous Semiconductors ◽  
Group V
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