BULK AND THIN FILM SWITCHING AND MEMORY EFFECTS IN SEMICONDUCTING CHALCOGENIDE GLASSES

1969 ◽  
Vol 15 (2) ◽  
pp. 55-57 ◽  
Author(s):  
H. J. Stocker
1977 ◽  
Vol 3 (4) ◽  
pp. 217-224 ◽  
Author(s):  
D. P. Oxley

Experiments on electroforming of Metal-Oxide-Metal thin film sandwiches which have been electroformed to exhibit voltage-controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current-controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.


1998 ◽  
Vol 287-288 ◽  
pp. 361-362
Author(s):  
K. Petkov ◽  
R. Todorov ◽  
D. Kozuharova

Author(s):  
M. Takeda ◽  
Y. Kakihara ◽  
M. Yoshida ◽  
J. Kawaguchi ◽  
H. Kishishita ◽  
...  
Keyword(s):  

Nanoscale ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 1080-1090 ◽  
Author(s):  
Tomasz Mazur ◽  
Piotr Zawal ◽  
Konrad Szaciłowski

Herein, we present memristive, thin film devices made of methylammonium bismuth iodide that exhibit a wide variety of neuromorphic effects simultaneously. Described materials have the potential to become universal cells in artificial neural networks.


2015 ◽  
Vol 723 ◽  
pp. 873-877
Author(s):  
Yu Dong Mao ◽  
Ming Tian Xu

An improved heat conduction model which reflects size and memory effects based on the CV model is proposed to simulate a one-dimensional thermal transport problem in a thin film induced by the ultra-fast laser. The results show that a thermal wave effect is appeared in heat conduction. We find that for the improved CV model in this work a larger Knudsen number will lead to a higher temperature. Although the improved CV model and the CV model lead to the similar thermal wave behavior, the thermal wave speeds for the two models are different.


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