Current−Voltage Hysteresis and Memory Effects in Ambipolar Organic Thin Film Transistors Based on a Substituted Oligothiophene

2007 ◽  
Vol 111 (1) ◽  
pp. 452-456 ◽  
Author(s):  
Xiuyu Cai ◽  
Christopher P. Gerlach ◽  
C. Daniel Frisbie
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Memory Effects ◽  
Organic Thin Film ◽  
Current Voltage ◽  
Voltage Hysteresis

Extracting the Device Parameters from Organic Thin Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Eung Seok Park ◽  
Pil Soo Kang ◽  
Gyu Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Mathematical Expressions ◽  
Current Voltage ◽  
Fitting Procedures ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous

ABSTRACTOrganic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

An Analytic Current–Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance

2008 ◽  
Vol 47 (4) ◽  
pp. 3174-3178 ◽  
Author(s):  
Keum-Dong Jung ◽  
Yoo Chul Kim ◽  
Byeong-Ju Kim ◽  
Byung-Gook Park ◽  
Hyungcheol Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Series Resistance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Current Voltage ◽  
Top Contact

scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
Sign in / Sign up

Export Citation Format

Share Document