Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube field-effect transistors by micro-photocurrent spectroscopy

2004 ◽  
Vol 84 (8) ◽  
pp. 1368-1370 ◽  
Author(s):  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Takashi Mizutani ◽  
Toshiya Okazaki ◽  
Hisanori Shinohara
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Photocurrent Spectroscopy ◽  
Walled Carbon Nanotubes

Fabrication of Carbon Nanotube Field-Effect Transistors with Metal and Semiconductor Electrodes

2007 ◽  
Vol 1057 ◽  
Author(s):  
Himani Sharma ◽  
Zhigang Xiao
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Bismuth Telluride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Back Side ◽  
Single Walled Carbon ◽  
Lift Off ◽  
Walled Carbon Nanotubes

ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap between the source and drain of CNTFETs to form the channel. The structure of CNTFET is similar to a conventional field-effect transistor with substrate acting as a back-side gate. Electron-beam evaporation was used to deposit gold and bismuth telluride thin films. Microfabrication techniques such as photolithography, e-beam lithography, and lift-off process were used to define and fabricate the source, drain, and gate of CNTFETs. The gap between the source and drain varied from 800 nm to 3 µm. The drain-source current (IDS) of the fabricated CNTFETs versus the drain-source voltage (VDS) and the gate voltage (VG) was characterized. It was found that in the case of gold (Au) electrodes, the IV curves of CNTFETs clearly show behavior of the CNT (metallic or semiconducting) aligned across the source and drain of CNTFETs, while in the case of bismuth telluride (Bi2Te3) electrodes, the I-V curves are less dependent on the type of CNTs (metallic or semiconducting). The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.

scholarly journals The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2481
Author(s):  
Takashi Uchino ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
John L. Hutchison ◽  
C. H. de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Hydrogen Adsorption ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Hydrogen Annealing ◽  
Metallic Behavior ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

2009 ◽  
Vol 94 (24) ◽  
pp. 243505 ◽  
Author(s):  
L. Nougaret ◽  
H. Happy ◽  
G. Dambrine ◽  
V. Derycke ◽  
J. -P. Bourgoin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes
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