Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition

2004 ◽  
Vol 95 (6) ◽  
pp. 3141-3147 ◽  
Author(s):  
Xiang Liu ◽  
Xiaohua Wu ◽  
Hui Cao ◽  
R. P. H. Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor

Growth Mechanism of YBa2Cu4O8(124) Phase in Metalorganic Chemical Vapor Deposition Film

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L725-L727 ◽  
Author(s):  
Harumi Hayashi ◽  
Yasuji Yamada ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Preparation and growth mechanism of one-dimensional NdB6 nanostructures: nanobelts, nanoawls, and nanotubes

RSC Advances ◽  
2016 ◽  
Vol 6 (48) ◽  
pp. 41891-41896 ◽  
Author(s):  
Wei Han ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Qidong Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
One Dimensional

1D NdB6 nanostructures (nanobelts, nanoawls, and nanotubes) have been synthesized through a chemical vapor deposition (CVD) process with a self-catalyzed mechanism.

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

scholarly journals Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1062
Author(s):  
Yi Chu ◽  
Yugui Cui ◽  
Shaoyun Huang ◽  
Yingjie Xing ◽  
Hongqi Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Element Analysis ◽  
Kondo Insulator ◽  
Catalyst Free ◽  
Transmission Electron ◽  
The Difference ◽  
Physical Phenomena

SmB6 nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6 nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6 nanowires. Here, we study the effect of growth mechanism on the surface of SmB6 nanowires synthesized by CVD. Two types of SmB6 nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6 nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6 nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6 nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.

Defects in interfacial layers and their role in the growth of ZnO nanorods by metallorganic chemical vapor deposition

2007 ◽  
Vol 91 (14) ◽  
pp. 143115 ◽  
Author(s):  
Dong Jun Park ◽  
Jeong Yong Lee ◽  
Dong Chan Kim ◽  
Sanjay Kumar Mohanta ◽  
Hyung Koun Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Interfacial Layers
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