Defects in interfacial layers and their role in the growth of ZnO nanorods by metallorganic chemical vapor deposition

2007 ◽  
Vol 91 (14) ◽  
pp. 143115 ◽  
Author(s):  
Dong Jun Park ◽  
Jeong Yong Lee ◽  
Dong Chan Kim ◽  
Sanjay Kumar Mohanta ◽  
Hyung Koun Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Interfacial Layers

scholarly journals Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor deposition

1990 ◽  
Vol 5 (11) ◽  
pp. 2367-2377 ◽  
Author(s):  
G-H.M. Ma ◽  
Y. H. Lee ◽  
J. T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Forward Bias ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Present Condition ◽  
Zero Bias ◽  
Plan View ◽  
Interfacial Layers

Diamond films grown by Bias-Controlled Hot Filament Chemical Vapor Deposition (BCCVD) on silicon (Si) substrates were characterized by Transmission Electron Microscopy (TEM). Both plan-view and cross-sectional TEM samples were made from diamond films grown under different biasing conditions. It was found that defect densities in the films were substantially reduced under zero and reverse bias (substrate negative relative to the filament) as compared to forward bias. Furthermore, the diamond/Si interface of the reverse and zero bias films consisted of a single thin interfacial layer whereas multiple interfacial layers existed at the diamond/Si interface of films grown under forward (positive) bias. Tungsten (W) contamination was also found in the interfacial layers of forward bias films. It is concluded that forward biasing in the present condition is not favorable for growing high quality, low defect density, diamond films. The possible mechanisms which induced the microstructural differences under different biasing conditions are discussed.

Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. H. Lee ◽  
G.-H. Ma ◽  
K. J. Bachmann ◽  
J. T. Glass
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Lattice Parameter ◽  
Substrate Material ◽  
Diamond Growth ◽  
Interfacial Layers ◽  
Defect Densities

ABSTRACTThe growth of diamond films on Si(001), polycrystalline Ni, Mo, Ta, and W substrates by biased controlled chemical vapor deposition is discussed. Biasing effects were examined using the Si(001) substrates. The film quality as judged by Raman spectroscopy and scanning electron microscopy depended strongly on the biasing conditions. Under low current reverse bias conditions, highly faceted cubooctahedral polycrystalline diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained. Transmission electron microscopy indicated that these films contained relatively low defect densities and no significant interfacial layers. Biasing into high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2 bonded carbon into the diamond film. Such films were found to contain very high defect densities and a relatively thick interfacial layer. An investigation of the effects of substrate material was also conducted. Films grown on Si, Ni and W exhibited the best quality. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed.

Fast-response ozone sensor with ZnO nanorods grown by chemical vapor deposition

2010 ◽  
Vol 144 (1) ◽  
pp. 120-125 ◽  
Author(s):  
Forest Shih-Sen Chien ◽  
Chang-Ren Wang ◽  
Yu-Lin Chan ◽  
Hsiao-Lan Lin ◽  
Min-Hung Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Fast Response
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