Characteristics of single crystal “thin film” capacitor structures made using a focused ion beam microscope

2004 ◽  
Vol 84 (7) ◽  
pp. 1159-1161 ◽  
Author(s):  
M. M. Saad ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Film Capacitor ◽  
Thin Film Capacitor

Thin Film Capacitors Cut from Single Crystals Using Focused Ion Beam Milling

2002 ◽  
Vol 748 ◽  
Author(s):  
M. M. Saad ◽  
N. J. Donnelly ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Single Crystals ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Negative Influence ◽  
Cross Sectional ◽  
Thin Film Capacitors ◽  
In Series

ABSTRACTThe Focused Ion Beam Microscope (FIB) has been used to fabricate capacitors from single crystals of BaTiO3 and SrTiO3 with electrode areas ∼200μm2, and thickness of single crystal dielectric between 2μm and 500nm. Cross-sectional transmission electron microscopy revealed that during capacitor fabrication, the FIB rendered around 20nm of dielectric at the electrode-dielectric interface amorphous, associated with local gallium impregnation. Such a region would act electrically in series with the single crystal and would presumably have a considerable negative influence on dielectric properties. However, annealing prior to electrode deposition was found to fully recover the single crystal, and homogenise the gallium profile. Some subsequent dielectric testing of SrTiO3 was performed yielding a room temperature dielectric constant of ∼150 and loss tangent of 0.015 at 100kHz. A technique has therefore been demonstrated which allows fabrication of capacitors in which size-effects in ‘thin-films’ can be studied, without the influence of grain boundaries, and other issues associated with conventional thin film growth.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

2014 ◽  
Vol 922 ◽  
pp. 264-269 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Intermetallic Phase ◽  
Gamma Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

Fabrication of Dc-SQUID with As-Grown YBaCuO Thin Film by Focused Ion Beam

1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam
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