Switching by point-contact spin injection in a continuous film

2004 ◽  
Vol 84 (3) ◽  
pp. 380-382 ◽  
Author(s):  
T. Y. Chen ◽  
Y. Ji ◽  
C. L. Chien
2012 ◽  
Vol 190 ◽  
pp. 153-156
Author(s):  
S.G. Chigarev ◽  
E.M. Epshtein ◽  
Y.V. Gulyaev ◽  
I.V. Malikov ◽  
G.M. Mikhailov ◽  
...  

Electromagnetic radiation of 1 - 10 THz range is observed at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the components of the structure. By estimates, the injection can lead to inverted population of the spin subbands. The radiation power exceeds by orders of magnitude the thermal background (with the Joule heating taking into account) and follows the current without inertia. Efficiency of the oscillator depends strongly on the material used and quantum efficiency may exceed the unity. It means the stimulated radiation processes play an important role.


2009 ◽  
Author(s):  
T. Y. Chen ◽  
Y. Ji ◽  
S. X. Huang ◽  
C. L. Chien ◽  
M. D. Stiles

1999 ◽  
Vol 09 (PR10) ◽  
pp. Pr10-179-Pr10-181
Author(s):  
A. A. Sinchenko ◽  
Yu. I. Latyshev ◽  
S. G. Zybtsev ◽  
I. G. Gorllova

Author(s):  
K. Ando ◽  
E. Saitoh

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.


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