scholarly journals Spin precession due to spin-orbit coupling in a two-dimensional electron gas with spin injection via ideal quantum point contact

2005 ◽  
Vol 71 (15) ◽  
Author(s):  
Ming-Hao Liu ◽  
Ching-Ray Chang ◽  
Son-Hsien Chen
Keyword(s):  
Spin Injection ◽  
Electron Gas ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Spin Orbit Coupling ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Quantum Point ◽  
Ideal Quantum ◽  
Dimensional Electron Gas

scholarly journals Gate-defined quantum point contact in an InAs two-dimensional electron gas

2019 ◽  
Vol 100 (7) ◽  
Author(s):  
Christopher Mittag ◽  
Matija Karalic ◽  
Zijin Lei ◽  
Candice Thomas ◽  
Aymeric Tuaz ◽  
...  
Keyword(s):  
Electron Gas ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Quantum Point ◽  
Dimensional Electron Gas

scholarly journals Gate-defined quantum point contact in an InSb two-dimensional electron gas

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Zijin Lei ◽  
Christian A. Lehner ◽  
Erik Cheah ◽  
Christopher Mittag ◽  
Matija Karalic ◽  
...  
Keyword(s):  
Electron Gas ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Quantum Point ◽  
Dimensional Electron Gas

scholarly journals Двухканальный электронный транспорт в подвешенных квантовых точечных контактах с боковыми затворами

2020 ◽  
Vol 54 (12) ◽  
pp. 1344
Author(s):  
Д.А. Похабов ◽  
А.Г. Погосов ◽  
Е.Ю. Жданов ◽  
А.К. Бакаров ◽  
А.А. Шкляев
Keyword(s):  
Electron Gas ◽  
Point Contact ◽  
Channel Structure ◽  
Quantum Point Contact ◽  
Dimensional Electron ◽  
Conductance Quantization ◽  
Quantum Point ◽  
Dimensional Electron Gas ◽  
Electrostatic Mechanism ◽  
Double Channel

The conductance of a suspended quantum point contact fabricated from GaAs/AlGaAs heterostructures with a two-dimensional electron gas, equipped with the in-plane side gates separated from the constriction using lithographical trenches, is studied. The conductance as a function of the gate voltages demonstrates unusual double-channel regime with independent channel’s conductance quantization: two side gates can drive the conductance of the separate channels independently. A possible electrostatic mechanism of the double-channel structure formation inside a single constriction is connected with the lateral redistribution of the low-mobility X-valley electrons contained in superlattice layers, resulting in the emergence of the potential barrier in the middle of quantum point contact, separating the conducting electrons into two channels, symmetrically shifted towards the lithographical trenches, defining the nanostructure geometry.

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