The AFM Observation of Single Polyethylene Molecules in Coiled State on Mica

2003 ◽  
Author(s):  
V. V. Prokhorov
Keyword(s):  
Afm Observation ◽  
Coiled State

AFM Observation of Self-Assembled Monolayer Films on GaAs (110)

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1381-1386 ◽  
Author(s):  
Hirotaka Ohno ◽  
Makoto Motomatsu ◽  
Wataru Mizutani ◽  
Hiroshi Tokumoto
Keyword(s):  
Self Assembled Monolayer ◽  
Monolayer Films ◽  
Self Assembled ◽  
Afm Observation

Non-contact AFM observation of the () to (3×3) phase transition on Sn/Ge(111) and Sn/Si(111) surfaces

2007 ◽  
Vol 253 (6) ◽  
pp. 3072-3076 ◽  
Author(s):  
Insook Yi ◽  
Ryuji Nishi ◽  
Yoshiaki Sugimoto ◽  
Seizo Morita
Keyword(s):  
Phase Transition ◽  
Afm Observation

Boron-Doped Nanocrystalline Diamond Films Deposited By Using DC Arc Plasma Jet CVD

2010 ◽  
Vol 426-427 ◽  
pp. 30-34
Author(s):  
Bing Kun Xiang ◽  
Dun Wen Zuo ◽  
Xiang Feng Li ◽  
Feng Xu ◽  
M. Wang
Keyword(s):  
Diamond Film ◽  
Boron Concentration ◽  
Low Frequency ◽  
Nanocrystalline Diamond ◽  
Boron Doped ◽  
Nano Crystalline ◽  
Diamond Peak ◽  
Dc Arc ◽  
Afm Observation ◽  
Peak Value

Boron-doped micro-nanocrystalline diamond coating may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. Along with the increase of doped-boron concentration in the film, two-point resistance measurement indicates that film resistance presents exponential decrease; Raman spectrum test shows that, the characteristic peak value of diamond 1332cm-1 in the spectrum moves toward low frequency, the semi-height width of diamond peak, peak D and peak G, etc. in the spectrum is expanded, and the component of non-diamond bonds such as sp2, etc. in the film is increased; SEM and AFM observation shows that, increasing the doped-boron concentration could further subdivide the crystal grains in the film, and is beneficial for the growth of nano- or ultra-nano-crystalline diamond film; film annealing test shows that, micro-nanocrystalline diamond film with higher doped-boron concentration has better thermal stability than the micro-nanocrystalline diamond film without doped boron.

In situ AFM observation of heterogeneous growth of adsorbed film on cleaved mica surface

1998 ◽  
Vol 312 (1-2) ◽  
pp. 20-23 ◽  
Author(s):  
Bangyin Li ◽  
Masatoshi Fujii ◽  
Kazuhiro Fukada ◽  
Tadashi Kato ◽  
Tsutomu Seimiya
Keyword(s):  
Mica Surface ◽  
Adsorbed Film ◽  
Afm Observation

scholarly journals In situ AFM Observation of Surface Deformation of Polyimide Film

2004 ◽  
Vol 32 (4) ◽  
pp. 211-214 ◽  
Author(s):  
Takashi Nishino ◽  
Akiko Nozawa ◽  
Masaru Kotera ◽  
Katsuhiko Nakamae
Keyword(s):  
Surface Deformation ◽  
Polyimide Film ◽  
Afm Observation

Tensile Behaviour and Fracture Characteristics of Polydimethylsiloxane (PDMS) Filled Silica Composites

2015 ◽  
Vol 1087 ◽  
pp. 6-10
Author(s):  
Mohd Azham Azmi ◽  
Sufiah Mohamad Yahya ◽  
Sufizar Ahmad ◽  
Hariati Taib
Keyword(s):  
Room Temperature ◽  
Fracture Behaviour ◽  
Tensile Loading ◽  
Crystalline Silica ◽  
Tensile Behaviour ◽  
Casting Method ◽  
Fracture Characteristics ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Observation

The focus of this study is to investigate the mechanical properties and fracture behaviour of polydimethylsiloxane filled crystalline silica composites (PDMS/CS) upon tensile loading. The PDMS/CS composites were fabricated by using casting method and cured at room temperature for 24 hours. Crystalline silica (CS) were added to PDMS at compositions of 2, 6, 10 wt%. The tensile properties of PDMS/2wt%CS showed that the tensile stress were improved by 4.3%. Fracture behaviour as determined by the characteristic of fracture surface of pure PDMS and PDMS/CS composites were analysed using Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Observation via FESEM and AFM indicated different fracture characteristic of filled PDMS and unfilled PDMS. The addition of CS as fillers were indeed proven to improve the strength of the composites.

High Throughput SiC Wafer Polishing with Good Surface Morphology

2007 ◽  
Vol 556-557 ◽  
pp. 753-756 ◽  
Author(s):  
Tomohisa Kato ◽  
Keisuke Wada ◽  
Eiji Hozomi ◽  
Hiroyoshi Taniguchi ◽  
Tomonori Miura ◽  
...  
Keyword(s):  
Free Surface ◽  
High Throughput ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Flat Surface ◽  
Good Surface ◽  
Wafer Polishing ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Afm Observation

We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <112 _ 0>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 μm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area.

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