Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor

2004 ◽  
Vol 95 (2) ◽  
pp. 713-717 ◽  
Author(s):  
Fabrice Payet ◽  
Nicolas Cavassilas ◽  
Jean-Luc Autran
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Phonon Velocity

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor Applications

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2419-2422 ◽  
Author(s):  
Jeffrey Welser ◽  
Judy L. Hoyt ◽  
James F. Gibbons
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si

Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material

2002 ◽  
Vol 92 (3) ◽  
pp. 1298-1306 ◽  
Author(s):  
S. H. Olsen ◽  
A. G. O’Neill ◽  
S. J. Bull ◽  
N. J. Woods ◽  
J. Zhang
Keyword(s):  
Surface Roughness ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Processing ◽  
Strained Si

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type
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