Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering

2003 ◽  
Vol 83 (21) ◽  
pp. 4387-4389 ◽  
Author(s):  
Woo Young Park ◽  
Kun Ho Ahn ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Compressive Stress ◽  
Rf Magnetron Sputtering ◽  
Tio3 Thin Film ◽  
Thin Film Capacitors

Synthesis of lead-free (Bi0,5Na0,5)TiO3 thin film by RF magnetron sputtering: Impact of Na on the properties of film

2020 ◽  
Vol 556 (1) ◽  
pp. 79-86
Author(s):  
Ahmad Hamieh ◽  
Freddy Ponchel ◽  
Sophie Barrau ◽  
Denis Remiens
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lead Free ◽  
Tio3 Thin Film

Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
B. Ea-Kim ◽  
F. Varniere ◽  
M. C. Hugon ◽  
B. Agius ◽  
R. Bisaro ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Heating Rates ◽  
Tem Analysis ◽  
Low Leakage ◽  
Annealing Conditions ◽  
Low Leakage Current ◽  
Process Studies

AbstractThe electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

Impacts of Cu/TaN Electrode on the Electrical Properties of Metal-insulator-metal (Ba,Sr)TiO3 Thin-film Capacitors

2007 ◽  
Author(s):  
Wen-Fa Wu ◽  
Kou-Chiang Tsai ◽  
Chuen-Guang Chao ◽  
Jain-Tsai Lee ◽  
Wei-Che Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Tio3 Thin Film ◽  
Metal Insulator ◽  
Thin Film Capacitors ◽  
Metal Insulator Metal

Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

2014 ◽  
Vol 40 (9) ◽  
pp. 14957-14964
Author(s):  
Jin-Seong Kim ◽  
Jae-Min Han ◽  
Mi-Ri Joung ◽  
Sang-Hyo Kweon ◽  
Chong-Yun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrate

SBTN thin film capacitors prepared by RF-magnetron sputtering

1999 ◽  
Vol 26 (1-4) ◽  
pp. 31-37 ◽  
Author(s):  
Shan Sun ◽  
Glen R. Fox ◽  
T. Domokos Hadnagy
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Thin Film Capacitors
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