Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method

2016 ◽  
Vol 112 ◽  
pp. 53-58 ◽  
Author(s):  
Tae-Ho Lee ◽  
Dae-Hyeon Kim ◽  
Bo-Yun Kim ◽  
Hye-Yoon Choi ◽  
Joon-Hak Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Structural And Electrical Properties

Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

2014 ◽  
Vol 40 (9) ◽  
pp. 14957-14964
Author(s):  
Jin-Seong Kim ◽  
Jae-Min Han ◽  
Mi-Ri Joung ◽  
Sang-Hyo Kweon ◽  
Chong-Yun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrate

scholarly journals Investigation of Optical, Structural and Electrical Properties of Heterostructure Fe2O3 Deposited by RF Magnetron Sputtering on ZnO Layer by Spray Pyrolysis

2021 ◽  
Author(s):  
Sevda Sarıtaş ◽  
Tuba Çakıcı ◽  
Günay Merhan Muğlu ◽  
Muhammet Yıldırım
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Spray Pyrolysis ◽  
Spherical Shape ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Sem Images ◽  
X Ray ◽  
Hall Measurements ◽  
Structural And Electrical Properties

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.

Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
B. Ea-Kim ◽  
F. Varniere ◽  
M. C. Hugon ◽  
B. Agius ◽  
R. Bisaro ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Heating Rates ◽  
Tem Analysis ◽  
Low Leakage ◽  
Annealing Conditions ◽  
Low Leakage Current ◽  
Process Studies

AbstractThe electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

Sign in / Sign up

Export Citation Format

Share Document