High-pressure synthesis and ferroelectric properties in perovskite-type BiScO3–PbTiO3 solid solution

2004 ◽  
Vol 95 (1) ◽  
pp. 231-235 ◽  
Author(s):  
Yoshiyuki Inaguma ◽  
Atsushi Miyaguchi ◽  
Masashi Yoshida ◽  
Tetsuhiro Katsumata ◽  
Yoshiro Shimojo ◽  
...  
1991 ◽  
Vol 46 (10) ◽  
pp. 1315-1318 ◽  
Author(s):  
Klaus-Jürgen Range ◽  
Franz Rau ◽  
Ulrich Klement

Single crystals of SrVO3, Sr2VO4 and Sr3V2O7 have been obtained by high-pressure reactions in a modified belt-type apparatus. The crystal structures, refined from diffractometer data, are as follows: SrVO3, perovskite type, Pm3̄m, a = 3.8408(3) Å, R = 0.017, Rw = 0.018, composition from occupancy refinement of oxygen positions SrVO2.93(2); Sr2VO4, K2NiF4 type, I 4/mmm, a = 3.837(1), c = 12.569(1) Å, R = 0.014, Rw = 0.017; Sr3V2O7, Sr3Ti2O7 type, I 4/mmm, a = 3.839(1), c = 20.262(2) Å, R = 0.020, Rw = 0.029.


2014 ◽  
Vol 2 (18) ◽  
pp. 6384-6395 ◽  
Author(s):  
Thorsten Schröder ◽  
Tobias Rosenthal ◽  
Nadja Giesbrecht ◽  
Stefan Maier ◽  
Ernst-Wilhelm Scheidt ◽  
...  

Solid solutions of GeTe, AgInTe2 and optionally AgSbTe2 (accessible via high-pressure synthesis or by quenching, depending on the phases’ In content) exhibit remarkable thermoelectric properties that clearly reflect transitions between metastable and stable phases.


1998 ◽  
Vol 547 ◽  
Author(s):  
W. Cheikh-Rouhou ◽  
R. Senis ◽  
C. Chaillout ◽  
P. Strobel ◽  
B. Martinez ◽  
...  

AbstractSubstitutions in the pyrochlore-type oxide Tl2Mn2O7 have been carried out on both the Mn and the TI site, using high pressure synthesis at 4-6 GPa. We show that a continuous solid solution exists between Tl2Mn2O7, and Tl2Ru2O7, and that the replacement of a fraction of Mn by Ru dramatically changes the transport properties from metallic to semiconducting and induces magnetoresistance (MR) in this system. MRs up to 95% (vs. RO) have been observed. The Tl site, already known to accept In or Sc, can also be substituted by the larger cation Bi3+, which also induces a metal-insulator transition at low substitution level.


2009 ◽  
Vol 11 (3) ◽  
pp. 694-699 ◽  
Author(s):  
Tamas Varga ◽  
John F. Mitchell ◽  
Kazunari Yamaura ◽  
David G. Mandrus ◽  
Jun Wang

2017 ◽  
Vol 100 (4) ◽  
pp. 1285-1289 ◽  
Author(s):  
Masashi Miyakawa ◽  
Kiyoshi Kobayashi ◽  
Takashi Taniguchi

2018 ◽  
Vol 28 (3) ◽  
pp. 193-205
Author(s):  
Tetsuhiro KATSUMATA ◽  
Yoshiyuki INAGUMA ◽  
Daisuke MORI ◽  
Akihisa AIMI

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