Optical and electrical properties of in situ-annealed p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers for applications as infrared detectors

2003 ◽  
Vol 83 (18) ◽  
pp. 3776-3778 ◽  
Author(s):  
Y. S. Ryu ◽  
Y. B. Heo ◽  
B. S. Song ◽  
S. J. Yoon ◽  
Y. J. Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Infrared Detectors ◽  
Buffer Layers ◽  
Optical And Electrical Properties ◽  
Cdte Buffer ◽  
P Type

scholarly journals Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097219 ◽  
Author(s):  
W. C. Mitchel ◽  
S. Elhamri ◽  
H. J. Haugan ◽  
R. Berney ◽  
Shin Mou ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Infrared Detectors ◽  
Buffer Layers ◽  
P Type

Formation of p-Type Hg0.7Cd0.3Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to In Situ Thermal Annealing

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1046-L1048 ◽  
Author(s):  
Young Sun Ryu ◽  
Bong Seok Song ◽  
Tae Won Kang ◽  
Hyun Jeong Kim ◽  
Tae Whan Kim
Keyword(s):  
Thermal Annealing ◽  
Buffer Layers ◽  
Cdte Buffer ◽  
P Type

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

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