ABSTRACTThere is considerable interest at present in the mechanisms of tilting of epitaxial films, such that low index planes in layer and substrate have slightly different orientations. There are two primary causes of this effect: a) coherency strains and b) the action of misfit dislocations. It is important to distinguish between the two effects, particularly in the case of strained layers used for band-gap engineering. Using a recent formulation of the Frank-Bilby equation for the dislocation content of interfaces, it is shown how planes may be rotated in coherent layers due to both the Poisson effect and anisotropic misfit. An advantage of the Frank-Bilby equation is that it allows consideration of semicoherent layers. It is shown that a side effect of misfit dislocation introduction can be to introduce a further rotation of the epitaxial layer. Both these effects have been measured experimentally. The amount and the sense of rotation is compared to theory.
Correction to “Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO3 Epitaxial Films”